Yttrium Oxide Protective Film for Plasma and Halogen Resistance

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Solution Overview

Problem

Existing protective films in semiconductor manufacturing equipment, primarily composed of yttrium oxide, do not maintain sufficient halogen resistance and durability against plasma over extended periods, despite increasing indentation hardness to 8 GPa.

Innovation Solution

Enhance the indentation hardness of the protective film containing yttrium oxide to 10 GPa or more, reducing porosity to an undetectable level, and adjust the yttrium-to-oxygen atomic ratio to 1:1 to 1:1.26 during film formation to improve halogen resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the indentation hardness of the protective film is increased to 8 GPa to reduce porosity, then the halogen resistance is improved, but the durability against plasma cannot be maintained for extended periods

Engineering Contradiction:

Improvehalogen resistanceVSAvoiddurability against plasma

Core Design Contradiction:

ReliabilityVSDuration of action of stationary object

Solution Approach 1:

The patent applies parameter changes by increasing the indentation hardness from 8 GPa to 10 GPa or more, and adjusting the yttrium-to-oxygen atomic ratio to 1:1 to 1:1.26. These parameter modifications resolve the contradiction by achieving both improved halogen resistance and extended durability against plasma for over 1000 seconds

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The protective film is formed as a composite material with specific composition (yttrium oxide with controlled oxygen content) and structure (density and hardness). This composite approach allows simultaneous optimization of halogen resistance and plasma durability that cannot be achieved with conventional single-parameter adjustments

Inventive Principle:

Principle #40Composite materials

2Reliability

If the indentation hardness is increased beyond 8 GPa, then the halogen resistance further enhances, but the manufacturing complexity increases

Engineering Contradiction:

Improvehalogen resistanceVSAvoidfilm formation process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent resolves this contradiction by identifying specific parameter ranges (indentation hardness of 10 GPa or more, yttrium-to-oxygen atomic ratio of 1:1 to 1:1.26) that achieve superior halogen resistance while maintaining manufacturability through controlled deposition processes

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The enhanced protective film maintains durability against plasma for a longer period, with improved halogen resistance and reduced microcrack formation, thereby reducing particle generation.

Implementation Method 1

the indentation hardness of the protective film is 10 GPa or more

Methodology Applied

Scientific EffectHardness: Vickers Hardness Test

Implementation Method 2

reducing porosity to an undetectable level

Methodology Applied

Scientific EffectPorosity: Porosity

Data Source

PatentUS20250308854A1Structural member

Publication Date: 2025.10.02 TOTO LTD

AI summary

A structural member 10 has a base material 100 and a protective film 200 covering the surface Si of the base material 100. The protective film 200 is a film containing yttrium oxide as a main component, and an indentation hardness of the protective film 200 is 10 GPa or more.