Polycrystalline Yttrium Oxide Film for Semiconductor Components
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor manufacturing components face challenges in achieving high plasma resistance, particularly in suppressing the generation of particles with diameters of 0.1 μm or less, which is crucial for fine wiring and improving semiconductor element yields.
Innovation Solution
A component with a polycrystalline yttrium oxide film is developed, where the ratio of monoclinic to cubic yttrium oxide peaks in an X-ray diffraction pattern is controlled to 0≤Im/Ic≤0.002, ensuring a predominantly cubic yttrium oxide structure with reduced lattice defects and impurities, enhancing plasma resistance and film uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a conventional yttrium oxide film is used, then plasma resistance is provided, but particle generation with diameter of 0.1 μm or less cannot be sufficiently suppressed
Solution Approach 1:
The patent changes the crystal structure parameter of yttrium oxide from mixed phases to predominantly cubic phase (controlling the Im/Ic ratio to 0.005 or less), which fundamentally alters the material's properties to simultaneously achieve high plasma resistance and low particle generation
Solution Approach 2:
The patent creates a composite film structure by combining cubic yttrium oxide phase with controlled monoclinic phase, forming a multi-phase composite material that optimizes both plasma resistance and particle suppression properties
2Manufacturing precision
If fine wiring is implemented for high performance, then semiconductor element performance is improved, but particle generation with diameter of 0.1 μm or less increases
Solution Approach 1:
By changing the crystal structure parameter (Im/Ic ratio) of the yttrium oxide film to predominantly cubic phase, the material becomes suitable for fine wiring applications by suppressing particle generation while maintaining the precision required for fine wiring manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The component significantly improves plasma resistance, reduces particle generation, and maintains high mechanical strength and heat shock resistance, effectively supporting the manufacturing of semiconductor elements with fine wiring.
Implementation Method 1
a component mounted in the semiconductor manufacturing apparatus is required to have resistance with respect to the plasma (plasma resistance)
Implementation Method 2
In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide
Data Source
AI summary
A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.