Yttrium Oxide Material Strength via SiC Grain Control
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Solution Overview
Problem
Conventional yttrium oxide-containing materials used in semiconductor manufacturing equipment have inferior mechanical characteristics, such as low three-point bending strength and fracture toughness, making them prone to breakage during machining and use.
Innovation Solution
Incorporating silicon carbide (SiC) and yttrium fluoride (YF3) into yttrium oxide (Y2O3) and sintering the mixture at a temperature between 1,300°C and 1,850°C to enhance mechanical properties, with a grain diameter of SiC maintained at 3 μm or less to prevent corrosion and maintain surface smoothness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If silicon carbide is added to yttrium oxide to improve mechanical strength, then three-point bending strength and fracture toughness increase, but corrosion resistance deteriorates due to SiC being less corrosion-resistant to halogen-based plasma
Solution Approach 1:
The patent applies parameter changes by strictly controlling the grain diameter of silicon carbide to 3 μm or less. This parameter control transforms the material's performance: fine-grained SiC provides mechanical reinforcement while minimizing corrosion-induced cavity formation, thereby resolving the contradiction between strength improvement and corrosion resistance maintenance
Solution Approach 2:
The patent creates a composite material system combining yttrium oxide matrix with fine-grained silicon carbide particles and rare-earth fluoride additives. This composite structure leverages the high strength of SiC while the yttrium oxide matrix maintains overall corrosion resistance, and the rare-earth fluoride phase suppresses SiC grain growth and corrosion, thus resolving the strength-corrosion resistance contradiction
2Volume of stationary object
If sintering temperature is increased to activate sintering and produce high density material, then material density increases, but strength deteriorates due to grain growth of silicon carbide and other phases
Solution Approach 1:
The patent applies parameter changes by optimizing the sintering temperature to the specific range of 1,300°C to 1,850°C. This temperature parameter control activates liquid phase sintering (above eutectic temperature of 1,300°C) to achieve high density while preventing excessive grain growth that would deteriorate strength, thus resolving the density-strength contradiction
Solution Approach 2:
The patent utilizes phase transitions by sintering above the eutectic temperature of 1,300°C to generate liquid phase that enhances sintering activity and achieves high density. The rare-earth fluoride forms a liquid phase at sintering temperature that facilitates densification while the subsequent cooling solidifies the structure with fine grain distribution, resolving the density-strength trade-off
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting yttrium oxide-containing material exhibits improved yield, handling, and reliability with increased three-point bending strength and fracture toughness, while maintaining corrosion resistance and preventing strength deterioration.
Implementation Method 1
sintering the mixture at a temperature between 1,300°C and 1,850°C
Implementation Method 2
the eutectic temperature of yttrium oxide and yttrium fluoride is 1,300°C, the sintering temperature of 1,300°C or above produces a liquid phase and thereby sintering is activated
Data Source
AI summary
There is provided an yttrium oxide-containing material with excellent mechanical characteristics. The yttrium oxide-containing material becomes strong by adding silicon carbide (SiC) and yttrium fluoride (YF3) to yttrium oxide (Y2O3). Accordingly, the yield, handling and reliability can be improved when this strengthened yttrium oxide-containing material is applied to and used for components of semiconductor manufacturing equipment.