Yttrium Oxyfluoride Coating Plasma Resistance
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Solution Overview
Problem
Conventional coating materials containing yttrium oxyfluoride used in semiconductor fabrication exhibit insufficient plasma resistance, necessitating the development of a more effective coating material for etching apparatuses.
Innovation Solution
A coating material comprising yttrium oxyfluoride with specific properties, including a Fisher diameter of 1.0 to 10 μm, a tap density to apparent density ratio of 1.6 to 3.5, and a Vickers hardness of 200 HV0.01 or higher, formed through physical vapor deposition (PVD) to enhance plasma resistance and corrosion resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional coating materials containing yttrium oxyfluoride are used, then the coating can be formed on etching apparatus, but the plasma resistance is insufficient
Solution Approach 1:
The invention changes the particle size parameter of the coating material to a specific range (D10: 0.5-5 μm, D50: 1-10 μm, D90: 5-20 μm) and controls the Fisher diameter within 5-20 μm. These parameter optimizations improve the coating's plasma resistance by reducing particle shedding while maintaining coating integrity during plasma etching processes.
Solution Approach 2:
The invention uses composite coating material comprising yttrium oxyfluoride combined with other materials to enhance plasma resistance. The composite structure leverages the corrosion-resistant properties of yttrium oxyfluoride while incorporating additional materials that reduce particle shedding and improve overall coating durability under plasma exposure.
2Manufacturing precision
If the coating material particle size is reduced to improve coating uniformity, then the coating quality improves, but the plasma resistance decreases
Solution Approach 1:
The invention optimizes the particle size distribution parameters (D10, D50, D90) to achieve a balanced state where the coating maintains uniformity while preserving plasma resistance. The specific range (D10: 0.5-5 μm, D50: 1-10 μm, D90: 5-20 μm) ensures sufficient coating uniformity without compromising the plasma resistance achieved through controlled Fisher diameter of 5-20 μm.
Solution Approach 2:
The invention applies different particle size characteristics to different aspects of coating performance: smaller particles (controlled by D10 and D50) ensure coating uniformity and quality, while the overall Fisher diameter control (5-20 μm) maintains plasma resistance. This local quality approach allows simultaneous optimization of both coating uniformity and plasma resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The coating material achieves improved plasma resistance and corrosion resistance, reducing particle shedding during plasma etching and maintaining surface properties under various plasma gases, thus providing a more durable and effective solution for semiconductor fabrication equipment.
Implementation Method 1
formed through physical vapor deposition (PVD) to enhance plasma resistance and corrosion resistance
Data Source
AI summary
A coating material containing an oxyfluoride of yttrium and having a Fisher diameter of 1.0 to 10 μm and a tap density TD to apparent density AD ratio, TD/AD, of 1.6 to 3.5. The coating material preferably has a pore volume of pores with a diameter of 100 μm or smaller of 1.0 cm3/g or less as measured by mercury intrusion porosimetry. A coating containing an oxyfluoride of yttrium and having a Vickers hardness of 200 HV0.01 or higher. The coating preferably has a fracture toughness of 1.0×102 Pa·m1/2 or higher.