YZrO Composite Coating for Low-Particle Fluorine Plasma Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor manufacturing materials do not effectively suppress fluorination in fluorine plasma environments, leading to high particle generation, which is a challenge with the miniaturization of semiconductors.
Innovation Solution
A composite structure comprising Y2SiO5 crystal with specific lattice constants, peak intensity ratios, and indentation hardness is used to form a ceramic coating on a base material, which suppresses fluorination and reduces particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ceramics (alumina, yttria, fluorides) are used as coating materials, then plasma resistance is improved, but particle generation increases in fluorine plasma environments
Solution Approach 1:
The patent applies parameter changes by precisely controlling the lattice constants of Y2SiO5 crystal (a>9.06, b>6.93, c>6.70) and the peak intensity ratio (300)/(121) > 100% in X-ray diffraction. These parameter specifications transform the material properties to achieve both plasma resistance and low particle generation, resolving the contradiction between reliability and harmful factor reduction.
Solution Approach 2:
The patent uses Y2SiO5 based material as a composite ceramic coating that combines the benefits of plasma resistance with suppressed fluorination. This composite material approach allows achieving low particle generation in fluorine plasma environments while maintaining high plasma resistance, overcoming the limitations of conventional single-material coatings.
2Object-generated harmful factors
If Y2SiO5 based material is used to suppress fluorination, then particle generation is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent establishes specific parameter ranges for lattice constants (a>9.06, b>6.93, c>6.70) and peak intensity ratio (300)/(121) > 100% that define the optimal material properties. By setting these quantitative parameters, the patent provides clear manufacturing targets that balance fluorination suppression performance with achievable manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite structure effectively reduces particle generation and etching in fluorine plasma environments, maintaining low-particle generation properties for semiconductor manufacturing.
Implementation Method 1
by making the lattice constant of it larger than the value that it normally has, fluorination can be suppressed in a fluorine plasma environment
Implementation Method 2
by making a specific peak ratio of X-ray crystal diffraction a specific value, fluorination can be suppressed in a fluorine plasma environment
Implementation Method 3
by controlling the indentation hardness of it, fluorination can be suppressed in a fluorine plasma environment
Data Source
AI summary
Disclosed is a composite structure having low-particle generation usable for a member for a semiconductor manufacturing apparatus and also the semiconductor manufacturing apparatus. The composite structure including a base material and a structure that is provided on the base material wherein the structure comprises Y2O3—ZrO2 solid solution (YZrO) as a main component, and lattice constants of the crystal satisfy at least one of a>9.06, b>6.93, and c>6.70 or an peak intensity ratio (300)/(121) which is the ratio of (300) peak to (121) peak in X-ray diffraction of the crystal, is greater than 100% has low-particle generation and is suitably used as a member for a semiconductor apparatus.