Y2O3-ZrO2 Composite Coating for Low-Particle Fluorine Plasma Resistance
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Solution Overview
Problem
Existing semiconductor manufacturing apparatus materials fail to meet the high demand for low-particle generation due to insufficient plasma resistance and etching suppression, particularly in fluorine plasma environments, despite the use of Y2O3—ZrO2 materials with Y2O3 content beyond 14 mol % or less.
Innovation Solution
A composite structure with a Y2O3—ZrO2 solid solution as the main component, with a Y2O3 content ranging from 20 mol % to 40 mol %, is used to suppress fluorination and etching in fluorine plasma environments, employing methods like aerosol deposition to form a ceramic coating on a base material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Y2O3 content in Y2O3-ZrO2 solid solution is increased to improve plasma resistance, then plasma resistance is improved, but etching by fluorine plasma increases due to fluorination
Solution Approach 1:
The patent applies parameter changes by precisely controlling the Y2O3 content within the range of 7-17 mol%, which is a specific parameter optimization. This controlled parameter range achieves the optimal balance between plasma resistance and etching suppression, resolving the contradiction between improving plasma resistance and preventing plasma-induced etching.
Solution Approach 2:
The patent uses composite materials by creating a Y2O3-ZrO2 solid solution with a specific composition ratio. The composite structure combines Y2O3 for plasma resistance with ZrO2 to suppress fluorination and etching, achieving synergistic effects that resolve the technical contradiction between plasma resistance and etching prevention.
2Reliability
If Y2O3 content is set to 40 mol % or more to improve plasma resistance, then plasma resistance is improved, but mechanical strength decreases
Solution Approach 1:
The patent applies parameter changes by optimizing the Y2O3 content to within 7-17 mol%, which is a significant reduction from the conventional 40 mol% or more. This parameter optimization simultaneously achieves adequate plasma resistance while maintaining mechanical strength, resolving the contradiction between plasma resistance and mechanical strength.
Solution Approach 2:
The patent uses composite materials by creating a Y2O3-ZrO2 solid solution where ZrO2 serves as a strength-enhancing component. The specific composition ratio creates a composite structure that balances plasma resistance (from Y2O3) and mechanical strength (from ZrO2), resolving the contradiction between these two properties.
3Ease of manufacture
If Y2O3 content is set to 14 mol % or less to improve ease of manufacture by aerosol deposition, then ease of manufacture is improved, but plasma resistance and particle resistance are insufficient
Solution Approach 1:
The patent applies parameter changes by expanding the Y2O3 content range to 7-17 mol%, which includes values higher than the conventional 14 mol% or less. This parameter optimization achieves adequate plasma resistance and particle resistance while maintaining ease of manufacture by aerosol deposition, resolving the contradiction between ease of manufacture and performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composite structure effectively reduces particle generation and etching, maintaining mechanical strength and plasma resistance, suitable for semiconductor manufacturing apparatus components.
Implementation Method 1
Y2O3 based ceramics are excellent in plasma resistance
Implementation Method 2
there are prior art technologies for producing Y2O3—ZrO2 materials by aerosol deposition methods (AD methods)
Data Source
AI summary
Disclosed is a composite structure having low-particle generation usable for a member for a semiconductor manufacturing apparatus and also the semiconductor manufacturing apparatus. The composite structure including a base material and a structure that is provided on the base material wherein the structure comprises Y2O3—ZrO2 solid solution (YZrO) as a main component, and a Y2O3 content of the YZrO is 20 mol % or more and 40 mol % or less has low-particle generation and is suitably used as a member for a semiconductor apparatus.