Zebra Nanosheet Multi-Stack Gate Oxide for Reliable Voltage Input

The gate oxide layer is segmented into two distinct parts: a standard gate oxide layer and an extra gate (EG) oxide layer. The EG oxide layer is formed only in specific regions where reliability is critical (around nanosheet layers in multi-stack transistors), while other regions use only the standard gate oxide layer. This segmentation allows the patent to improve reliability where needed without unnecessarily increasing manufacturing complexity across the entire substrate.

The patent applies different oxide layer configurations to different regions of the substrate based on local requirements. Regions with multi-stack transistors containing nanosheet layers receive the additional EG oxide layer for enhanced reliability, while regions with simpler transistor structures use only the standard gate oxide layer. This local quality approach ensures that the increased manufacturing complexity is applied only where it provides value.

The gate oxide structure is divided into a standard gate oxide layer and an optional extra gate (EG) oxide layer. The EG oxide layer is segmented to appear only in regions requiring enhanced reliability (multi-stack transistors with nanosheet layers), allowing the patent to control manufacturing costs by avoiding unnecessary EG oxide formation in simpler transistor regions.

The patent implements local quality by providing enhanced gate oxide protection only where needed. The EG oxide layer is formed selectively in regions with multi-stack transistors and nanosheet layers, while other regions use the standard, less expensive gate oxide structure. This approach improves reliability where critical without uniformly increasing manufacturing costs across the entire substrate.

The patent merges the manufacturing approaches for nanosheet transistors and FinFETs by using a common standard gate oxide layer formation process for both. The subsequent selective formation of the EG oxide layer provides the additional protection needed for nanosheet transistors without requiring entirely separate manufacturing lines. This merging reduces overall manufacturing complexity while maintaining the high device density benefits of nanosheet structures.

The standard gate oxide layer serves a universal function for both nanosheet transistors and FinFETs, providing basic gate insulation for all device types. The optional EG oxide layer then adds enhanced protection specifically where needed. This universal base layer approach simplifies manufacturing by using a single process for the foundation structure, reducing the complexity penalty associated with nanosheet transistor production.

The gate oxide structure is segmented into a universal standard gate oxide layer and a selective extra gate (EG) oxide layer. The EG oxide layer is segmented to appear only in regions requiring enhanced protection (analog circuits and multi-stack transistors), while other regions use only the simple standard gate oxide layer. This segmentation maintains manufacturing simplicity overall while providing enhanced protection where reliability is critical.

The patent applies local quality by providing enhanced gate oxide protection only in regions where reliable input voltage reception is required (analog circuits). The EG oxide layer is formed selectively in these regions, while digital or less critical regions use only the standard gate oxide layer. This approach ensures that regions requiring high reliability have sufficient protection against hard oxide breakdown without unnecessarily complicating manufacturing in other regions.