Zener Diode Integration in Semiconductor Substrate
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Solution Overview
Problem
Conventional semiconductor devices with a zener diode mounted on a substrate are bulky due to the larger size of the zener diode compared to the light emitting element, resulting in increased installation space requirements.
Innovation Solution
A semiconductor device where the zener diode is formed in the impurity diffusion region of the semiconductor substrate, allowing for electrical connection to the light emitting element, thereby reducing the overall size and installation space, and using a semiconductor zener diode with ionized N-type impurities and a sealing structural member for protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a zener diode is mounted on a substrate to protect the light emitting element from high voltage, then the light emitting element is protected, but the device size and installation space increase
Solution Approach 1:
The zener diode is integrated directly into the semiconductor substrate, merging the protection function with the substrate structure. This eliminates the need for a separate mounted zener diode component, thereby reducing installation space while maintaining protection functionality.
Solution Approach 2:
The zener diode structure is formed within the thickness dimension of the semiconductor substrate through impurity diffusion regions, rather than mounting it on the surface plane. This vertical integration reduces the footprint area while preserving the protection function.
2Reliability
If the zener diode is mounted on the substrate, then the protection function is achieved, but the device complexity increases
Solution Approach 1:
The zener diode is formed as an integrated structure within the semiconductor substrate using impurity diffusion regions, merging multiple functions (substrate support, electrical connection, and voltage protection) into a single component system, thereby reducing overall device complexity.
Solution Approach 2:
The semiconductor substrate serves multiple functions simultaneously: it provides mechanical support, electrical connections, and houses the zener diode protection structure through its impurity diffusion regions, reducing the need for separate dedicated components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device is made more compact with reduced installation space, effectively protecting the light emitting element from high voltages and ensuring efficient electrical connections.
Implementation Method 1
a zener diode is connected to the light emitting element, so that the light emitting element is protected
Implementation Method 2
the zener diode formed in the impurity diffusion region of the semiconductor substrate
Data Source
Figure 1
Figure 2
Figure 3A
AI summary
In a semiconductor device (100), a light emitting element (120) has been mounted on an upper plane of a semiconductor substrate (102). In an impurity diffusion region of the semiconductor substrate (102), a P conducting type of a layer (104), and an N layer (106) have been formed, while an N conducting type impurity is implanted to the P layer (104), and then the implanted impurity is diffused to constitute the N layer (106). A zener diode (108) made of a semiconductor device has been formed by the P layer (104) and the N layer (106).