Zero-Biased Multiplexer CTIA Pixel Circuit Design

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Solution Overview

Problem

Existing CTIA pixel circuits face issues with leakage current and large circuit area, which hinder the achievement of high conversion gain and linear zero-biased operation, especially when used in high-density image sensor arrays.

Innovation Solution

The implementation of a zero-biased multiplexer with a reset switch network comprising multiple transistors, which minimizes leakage current and reduces the per-pixel area by using a source-body tie and grounding body terminals of certain transistors, thereby reducing noise and dynamic range consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional CTIA pixel circuits are used, then charge transfer is enabled, but leakage current occurs and conversion gain is reduced

Engineering Contradiction:
Improveconversion gainVSAvoidleakage current
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent changes the biasing parameter of the multiplexer from conventional biased operation to zero-biased operation. By setting the multiplexer bias voltage to zero (Vmux = 0), the patent eliminates leakage current paths while maintaining charge transfer functionality, thereby improving conversion gain and linearity

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses a dummy photodiode that copies the structure and characteristics of real photodiodes but does not generate signal charge. This dummy photodiode is used to track and compensate for leakage currents, allowing the circuit to maintain high conversion gain by canceling out harmful leakage effects

Inventive Principle:
Principle #26Copying

2Power

If conventional CTIA pixel circuits are used, then charge amplification is achieved, but circuit area is large

Engineering Contradiction:
Improveconversion gainVSAvoidpixel area
Core Design Contradiction:
PowerVSArea of stationary object

Solution Approach 1:

The patent merges the multiplexer function with the CTIA input node by directly connecting the photodiode output to the amplifier input without a separate biased multiplexer stage. This integration eliminates redundant components and reduces pixel area while maintaining charge transfer and amplification functions

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The amplifier input node serves multiple functions simultaneously: it acts as the charge collection node from photodiodes, the virtual ground for transimpedance conversion, and the input to the integration capacitor. This multi-functionality reduces the number of separate components needed, thereby reducing overall pixel area

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of operation

If biased multiplexer is used, then charge transfer is controlled, but noise increases and dynamic range is consumed

Engineering Contradiction:
Improvecharge transfer controlVSAvoidnoise
Core Design Contradiction:
Ease of operationVSObject-affected harmful factors

Solution Approach 1:

The patent changes the multiplexer bias parameter from a non-zero voltage to zero voltage. By setting Vmux = 0, the patent eliminates the voltage-driven noise and dynamic range consumption associated with biased multiplexers while maintaining the ability to control charge transfer through the zero-biased switch configuration

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables a higher conversion gain while minimizing leakage current and reducing the area required per pixel, enhancing the performance and efficiency of CTIA pixel circuits in image sensors.

Implementation Method 1

charge is collected in a photoelectric conversion device of the pixel circuit as a result of the impingement of light

Methodology Applied
Scientific EffectPhotoelectric conversion: Photoelectric Effect

Data Source

PatentUS11606524B2CTIA CMOS image sensor pixel with zero-biased multiplexer
Publication Date: 2023.03.14 SONY GROUP CORP
  • US11606524B2 patent drawing
  • US11606524B2 patent drawing
  • US11606524B2 patent drawing

AI summary

An image sensor and pixel circuit therefor includes a plurality of photoelectric conversion devices, a zero-biased multiplexer connected to the plurality of photoelectric conversion devices, an amplifier including a first input terminal connected to the zero-biased multiplexer, and an output terminal, a capacitor disposed between the first input terminal and the output terminal, and a reset switch disposed between the first input terminal and the output terminal in parallel with the capacitor, the reset switch including a body terminal connected to a common reference voltage.