Zigzag Gate Stack Semiconductor Devices for Integration Density
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Solution Overview
Problem
The increasing demand for smaller, more integrated semiconductor devices poses challenges in maintaining reliability and integration density, particularly in vertical transistor structures where traditional designs face limitations in channel region arrangement and gate stack configuration.
Innovation Solution
The semiconductor device incorporates a substrate with gate stack portions and channel regions arranged in a zigzag pattern, featuring inclined lateral surfaces and alternating protrusion regions, which enhances integration density and reduces the tendency of gate stack portions to lean, thereby improving reliability and integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional vertical transistor structures are used to increase integration density, then device size is reduced, but reliability deteriorates due to gate stack leaning and channel region arrangement limitations
Solution Approach 1:
The gate stack portions are configured with asymmetric zigzag lateral surfaces instead of traditional symmetric vertical walls. This asymmetric zigzag pattern creates alternating protrusion and recess regions that mechanically interlock with channel regions, preventing gate stack leaning and improving reliability while maintaining high integration density
Solution Approach 2:
The invention transitions from traditional planar or simple vertical structures to three-dimensional zigzag configurations. The lateral surfaces of gate stack portions extend in zigzag patterns with inclined surfaces at specific angles, creating additional spatial dimensions for channel region arrangement and improving structural stability
2Area of stationary object
If gate stack portions are arranged closer together to increase integration density, then device area is reduced, but manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The zigzag configuration creates localized protrusion and recess regions with distinct geometric features. These local structural qualities provide natural alignment references and mechanical interlocking points, ensuring precise positioning of adjacent gate stack portions even when spaced closely together
Solution Approach 2:
The inclined surfaces of the zigzag lateral surfaces are configured with specific curvature and angle characteristics. These curved or angled surfaces facilitate controlled material deposition and etching processes, improving manufacturing precision by providing well-defined geometric boundaries for fabrication
3Stability of the object's composition
If channel regions are arranged in zigzag columns to improve reliability, then structural stability is enhanced, but device complexity increases
Solution Approach 1:
The channel regions are segmented into multiple columns arranged in zigzag patterns, with each column containing sequentially arranged channels. This segmentation allows the complex zigzag structure to be broken down into manageable repeating units, simplifying fabrication while maintaining structural stability
Solution Approach 2:
The zigzag columnar structure serves multiple functions simultaneously: it provides mechanical support to prevent gate stack leaning, creates precise alignment references for manufacturing, and organizes channel regions for efficient electrical connectivity. This multi-functionality reduces overall device complexity despite the intricate geometry
Data Source
AI summary
A semiconductor device includes a substrate having an upper surface extended in first and second directions perpendicular to each other, gate stack portions spaced apart from each other in the first direction, the gate stack portions including gate electrodes spaced apart from each other in a direction perpendicular to the an upper surface of the substrate and having lateral surfaces extended in the second direction to have a zigzag form, channel regions penetrating through the gate stack portions and disposed to form columns having a zigzag form in the second direction, at least two channel regions among the channel regions being linearly arranged in the first direction within the respective gate stack portion, and a source region disposed between the gate stack portions adjacent to each other and extended in the second direction to have a zigzag form.