Zigzag Semiconductor Pillar Capacitors for Sense Amplifier Accuracy
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Solution Overview
Problem
The capacitance of capacitor structures in semiconductor memory cells is a critical factor affecting the signal amplification accuracy of sense amplifiers, and existing technologies have limitations in enhancing this capacitance effectively.
Innovation Solution
A method is developed to form semiconductor structures with zigzag semiconductor pillars and interspaced capacitor structures, utilizing etching processes to create increased surface areas for capacitor electrodes, supported by a support structure, and incorporating materials like silicon nitride for enhanced capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional capacitor structures are used in semiconductor memory cells, then the device complexity is low and manufacturing is easier, but the capacitance is insufficient which limits signal amplification accuracy
Solution Approach 1:
The patent transitions from planar capacitor structures to three-dimensional vertically stacked capacitor structures. The capacitor structures are formed between and around semiconductor pillars in the vertical dimension, increasing capacitance by utilizing spatial stacking rather than expanding in the planar direction. This dimensional change allows higher capacitance within the same footprint area.
Solution Approach 2:
The patent implements nested capacitor structures where capacitor electrodes are positioned between semiconductor pillars and also wrap around them. The capacitor structures are nested within the three-dimensional arrangement of pillars, with first capacitor structures between pillars and second capacitor structures wrapping around pillars, creating a nested configuration that maximizes capacitance density.
2Measurement precision
If the capacitance of capacitor structures is increased to improve sense amplifier performance, then signal amplification accuracy improves, but the manufacturing process becomes more complex
Solution Approach 1:
The patent divides the capacitor formation process into multiple segments: first capacitor structures are formed between semiconductor pillars, then second capacitor structures are formed wrapping around the pillars. This segmentation allows each capacitor type to be formed with optimized processes, using different electrode materials and formation methods for each segment, thereby managing manufacturing complexity while achieving high total capacitance.
Solution Approach 2:
The patent employs different material parameters for different capacitor structures: first capacitor structures use conductive material filled in spaces between pillars, while second capacitor structures use different conductive materials formed by wrapping or deposition around pillars. By changing material parameters and formation methods for different capacitor segments, the patent achieves high capacitance while managing manufacturing complexity through specialized processes for each capacitor type.
Data Source
Figure 1~2A
Figure 2B~2C
Figure 2D~2E
AI summary
Embodiments of the disclosure provide a semiconductor structure and a method for forming the same. The method includes: providing a semiconductor substrate, in which stack structures and isolation structures alternately arranged along a first direction are formed on the semiconductor substrate; forming a support structure in the stack structures and the isolation structures; etching the stack structures and the isolation structures to form a plurality of zigzag first semiconductor pillars in an array arrangement along the first direction and a second direction, in which an interspace is formed between the zigzag first semiconductor pillars; each of the zigzag first semiconductor pillars comprises first convex structures and first concave structures alternately arranged along a third direction, and the zigzag first semiconductor pillars are supported by the support structure; the first direction, the second direction and the third direction are perpendicular to one another, and the second direction is perpendicular to a top surface of the semiconductor substrate; and forming capacitor structures the interspace.