Zinc Manganese Oxide Light Blocking Layer for UV Protection
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Solution Overview
Problem
Conventional thin film transistors with metal light blocking layers in display apparatuses face issues with reduced light transmittance and manufacturing yield due to ultraviolet ray degradation.
Innovation Solution
A thin film transistor substrate with a light blocking layer made of metal oxide, specifically zinc manganese oxide, which absorbs ultraviolet rays while maintaining high transmittance of visible light, is used, eliminating the need for a mask in manufacturing and reducing production costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal light blocking layer is used to prevent ultraviolet ray degradation, then reliability is improved, but light transmittance deteriorates
Solution Approach 1:
The patent changes the material parameter from conventional metal (such as aluminum or chromium) to metal oxide, specifically zinc oxide doped with manganese. This material substitution fundamentally alters the optical properties, enabling selective absorption of ultraviolet wavelengths while maintaining high transmittance in the visible spectrum range, thus resolving the contradiction between protection and light transmission.
Solution Approach 2:
The invention employs a composite material structure by doping manganese into zinc oxide to create zinc manganese oxide. This composite approach combines the protective properties of metal oxide with the specific optical characteristics of manganese doping, achieving enhanced ultraviolet absorption while preserving visible light transmittance, thereby simultaneously improving reliability and maintaining illumination quality.
2Manufacturing precision
If a mask is used to form a light blocking pattern, then manufacturing precision is improved, but productivity deteriorates
Solution Approach 1:
The patent extracts and eliminates the mask component from the manufacturing process. Instead of using a physical mask to define the light blocking pattern, the invention forms the pattern directly through selective deposition or doping processes applied to the zinc manganese oxide layer. This removal of the mask step simplifies the manufacturing flow, reduces process complexity, and improves productivity while maintaining the required pattern precision.
Solution Approach 2:
The invention performs preliminary action by pre-doping or pre-forming the zinc manganese oxide layer with the desired spatial distribution of manganese atoms before subsequent processing steps. This preliminary patterning allows the light blocking pattern to be established in advance, eliminating the need for mask-based pattern formation later in the process and thereby improving manufacturing efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The substrate effectively prevents degradation from ultraviolet rays, improving the reliability and transmittance of display panels while reducing manufacturing costs by eliminating the need for a mask in the manufacturing process.
Implementation Method 1
the light blocking layer may absorb an ultraviolet ray of the thin film transistor substrate from external ultraviolet ray
Data Source
AI summary
A thin film transistor substrate includes a substrate, a data line disposed on the substrate and which extends substantially in a predetermined direction, a light blocking layer disposed on the substrate and including a metal oxide including zinc manganese oxide, zinc cadmium oxide, zinc phosphorus oxide or zinc tin oxide, a gate electrode disposed on the light blocking layer, a signal electrode including a source electrode and a drain electrode spaced apart from the source electrode, where the source electrode is connected to the data line, and a semiconductor pattern disposed between the source electrode and the drain electrode.