Zinc Oxide Insulating Layer for Low-Temperature Electronic Devices
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Solution Overview
Problem
Existing electronic devices with photoelectric conversion elements face challenges in rational production methods and require higher temperatures for insulating layer formation, which can lead to thermal deterioration and stress issues affecting the light emitting/light receiving layer.
Innovation Solution
An electronic device with a zinc oxide-based insulating layer containing accessory components like aluminum oxide, magnesium oxide, niobium oxide, titanium oxide, and molybdenum oxide, formed at lower temperatures using a sputtering method, which reduces internal stress and enhances the sealing properties of the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a vapor phase growth method is used to form the insulating layer, then the insulating layer can be formed with good quality, but the film formation temperature becomes high (150°C to 250°C or 100°C to 200°C)
Solution Approach 1:
The patent changes the material composition parameters of the insulating layer by incorporating specific metal oxides (TiO2, Nb2O5, MoO3) in controlled amounts to modify the film's physical and chemical properties, enabling low-temperature formation while maintaining quality
Solution Approach 2:
The insulating layer is formed as a composite material combining zinc oxide as the base with accessory metal oxides (TiO2, Nb2O5, MoO3) to achieve enhanced properties that allow low-temperature deposition while maintaining insulating quality
2Reliability
If the insulating layer is formed at high temperature, then good insulating properties are achieved, but thermal deterioration and stress issues affect the light emitting/light receiving layer
Solution Approach 1:
The patent modifies the chemical composition parameters of the insulating layer by adding specific metal oxides to reduce internal stress and enable low-temperature formation, thereby eliminating thermal damage to the photoelectric conversion layer while maintaining insulating properties
Solution Approach 2:
The accessory metal oxides (TiO2, Nb2O5, MoO3) act as intermediary substances that mediate between the zinc oxide base and the photoelectric conversion layer, reducing stress transmission and thermal impact while maintaining insulating function
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the production of electronic devices with improved internal quantum efficiency, reduced dark current, and increased durability by controlling the oxygen gas partial pressure to manage internal stress and work function differences between electrodes.
Implementation Method 1
formed at lower temperatures using a sputtering method
Data Source
AI summary
An electronic device includes a first electrode 31, a light emitting/light receiving layer 20 formed on the first electrode 31, and a second electrode 32 formed on the light emitting/light receiving layer 20. The light emitting/light receiving layer 20 and/or the second electrode 32 is covered by an insulating layer 40 including a metal oxide that contains, as a main component, zinc oxide, while containing, as accessory components, at least two materials selected from the group consisting of aluminum oxide, magnesium oxide, niobium oxide, titanium oxide, molybdenum oxide and hafnium oxide.