Zinc Oxide LED Homojunction Fabrication

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Solution Overview

Problem

Zinc oxide-based light-emitting diodes face challenges in achieving P-type conductivity and forming homojunctions due to inherent donor defects, leading to inefficient light-emission and high power consumption, and are limited by high-temperature vacuum processes that restrict size and flexibility.

Innovation Solution

A light-emitting diode is fabricated using a P-type zinc oxide layer with nano-discs doped with impurities and an N-type zinc oxide layer with nano-rods, forming a homojunction with an epitaxial interface, which can be produced at low temperatures, allowing for improved light-emission efficiency and reduced power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If heterojunction is used to achieve P-type conductivity in zinc oxide LED, then P-type conductivity is achieved, but light-emitting efficiency deteriorates due to lattice mismatch at the interface

Engineering Contradiction:
ImproveP-type conductivity achievementVSAvoidlight-emitting efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent applies homogeneity by using zinc oxide for both P-type and N-type layers to create a homojunction structure. This eliminates lattice mismatch between different materials while achieving P-type conductivity through controlled doping with magnesium and aluminum, respectively. The homogeneous material composition ensures consistent crystal lattice and maintains high light-emitting efficiency.

Inventive Principle:
Principle #33Homogeneity

2Reliability

If high-temperature vacuum process is used for LED fabrication, then PN junction is formed, but flexible substrate cannot be utilized and device size is limited by equipment constraints

Engineering Contradiction:
ImprovePN junction formationVSAvoidsubstrate flexibility and device size
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The patent changes the processing temperature parameter from high-temperature (500°C or higher) to low-temperature conditions suitable for solution processing. This enables the use of flexible substrates that cannot withstand high temperatures and removes equipment size constraints, allowing fabrication of large-area LEDs on cost-effective flexible bases while maintaining reliable PN junction formation.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables the cost-effective fabrication of large-sized light-emitting diodes with enhanced light-emission efficiency and minimized power consumption, while allowing for the formation of homojunctions in low-temperature processes, overcoming the limitations of traditional zinc oxide-based LEDs.

Implementation Method 1

an N-type zinc oxide layer, which is formed on the P-type zinc oxide layer, comprises nano-rods, and the nano-rods of the N-type zinc oxide layer constitutes homojunction having an epitaxial interface with the P-type zinc oxide layer

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Implementation Method 2

a light-emitting diode may include a first electrode; a P-type zinc oxide layer which is formed on the first electrode and comprises nano-discs doped with an impurity or nano-rods of zinc oxide doped with an impurity

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS10256366B2Light-emitting diode and method of fabricating the same
Publication Date: 2019.04.09 IND ACADEMIC COOP FOUND YONSEI UNIV
  • US10256366B2 patent drawing
  • US10256366B2 patent drawing
  • US10256366B2 patent drawing

AI summary

Provided are a light-emitting diode and a method of fabricating the same. The light-emitting diode includes a first electrode; a P-type zinc oxide layer which is formed on the first electrode and comprises nano-discs doped with an impurity or nano-rods of zinc oxide doped with an impurity; an N-type zinc oxide layer, which is formed on the P-type zinc oxide layer, comprises nano-rods, and the nano-rods of the N-type zinc oxide layer constitutes homojunction having an epitaxial interface with the P-type zinc oxide layer; and a second electrode, which is formed on the N-type zinc oxide layer.