Zinc Oxide Sputtering Target (002) Orientation Arcing
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Solution Overview
Problem
The challenge is to improve the film formation rate and suppress arcing during the sputtering of zinc oxide-based transparent conductive films, which is essential for producing high-quality films with high productivity while avoiding the drawbacks of indium tin oxide (ITO) alternatives like zinc oxide, which suffer from insufficient conductivity and transparency.
Innovation Solution
A zinc oxide-based sputtering target with a degree of (002) orientation of 50% or greater and a density of 5.30 g/cm3 or greater is used, which reduces arcing and enhances film formation rate by minimizing electrical field concentrations and promoting uniform target depletion, thereby producing high-quality transparent conductive films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a sputtering target with decreased sintered grain diameter is used to suppress arcing, then arcing is reduced, but film formation rate decreases
Solution Approach 1:
The invention changes the crystallographic orientation parameter of the sintered body from random orientation to highly oriented (002) plane alignment. This parameter change enables simultaneous achievement of arcing suppression and high film formation rate, resolving the contradiction between these two requirements.
Solution Approach 2:
The invention creates a composite structure within the sintered body by combining fine sintered grain diameter (0.5-2 μm) with high (002) plane orientation. This composite approach integrates the arcing-suppressing effect of fine grains with the high-rate film formation capability of oriented crystals.
2Productivity
If a sputtering target with high film formation rate is used, then productivity is improved, but arcing increases and film quality deteriorates
Solution Approach 1:
The invention optimizes the crystal orientation parameter to achieve predominant (002) plane alignment, which inherently provides both high film formation rate and arcing suppression. This parameter optimization resolves the trade-off between productivity and film quality.
3Ease of manufacture
If conventional zinc oxide sputtering targets are used, then cost is reduced compared to ITO, but electrical conductivity and transparency are insufficient
Solution Approach 1:
The invention changes the density parameter to 5.30 g/cm³ or greater and the crystal orientation to 50% or greater (002) plane alignment. These parameter changes significantly improve electrical conductivity and transparency, making zinc oxide a reliable alternative to expensive ITO materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively improves the film formation rate and suppresses arcing, resulting in high-quality zinc oxide transparent conductive films with enhanced moisture resistance and productivity.
Implementation Method 1
abnormal electrical discharge called arcing may occur. Since arcing deteriorates the quality of zinc oxide film, impairs transparency and electrical conductivity, and also damages the underlying functional layer, it is important to suppress arcing during sputtering.
Implementation Method 2
Industrially, transparent conductive films are mainly produced by sputtering.
Data Source
AI summary
Provided is a zinc oxide-based sputtering target capable of improving the film formation rate while suppressing arcing in the formation of a zinc oxide-based transparent conductive film by sputtering. This zinc oxide-based sputtering target includes a zinc oxide-based sintered body mainly including zinc oxide crystal grains, and has a degree of (002) orientation of 50% or greater at a sputtering surface and a density of 5.30 g/cm3 or greater.