Zinc Oxide Transistor Fluoride Protection Layer
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Solution Overview
Problem
Transistors with oxide channel layers are prone to deterioration due to exposure to water vapors, oxygen, and hydrogen, which affects their operational characteristics in electronic apparatuses.
Innovation Solution
A transistor design that includes a zinc-containing oxide channel layer with a fluoride material-based protection portion on its surface, reducing the absorption of water vapors, oxygen, and hydrogen, thereby preventing deterioration. This protection portion can be represented by a specific functional group or a fluoride material-containing layer, such as polyfluorovinylidene, which is applied using methods like plasma treatment or ion plating.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If an oxide layer is used as a channel layer to increase operational characteristics, then carrier mobility is improved, but the channel layer deteriorates due to exposure to water vapors, oxygen and hydrogen
Solution Approach 1:
A fluoride material-containing layer is introduced as an intermediary between the oxide channel layer and the external environment. This protective layer acts as a barrier that prevents water vapors, oxygen, and hydrogen from directly contacting and deteriorating the channel layer, while allowing the channel layer to maintain its high carrier mobility properties
Solution Approach 2:
The fluoride material-containing layer creates an inert protective environment around the oxide channel layer. This layer has low permeability to water vapors, oxygen, and hydrogen, effectively isolating the channel layer from harmful external factors and preventing deterioration while preserving operational characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The fluoride material-based protection significantly reduces the permeation of harmful gases and moisture, enhancing the reliability and stability of the channel layer, maintaining the transistor's electrical characteristics and extending its lifespan in electronic devices like organic light-emitting and liquid crystal display devices.
Implementation Method 1
the channel layer-protection portion including the fluoride material may prevent (or reduce), for example, permeation of water vapors, oxygen and/or hydrogen into the channel layer
Implementation Method 2
the channel layer-protection portion including the fluoride material may prevent (or reduce), for example, permeation of water vapors, oxygen and/or hydrogen into the channel layer
Data Source
AI summary
Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.