Zn-based organic coordination nanoparticle and preparation method therefor, photoresist composition containing same, and use thereof
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Solution Overview
Problem
Traditional photoresists exhibit large pattern edge roughness and low pattern resolution, which hinders the advancement of photolithography technology, especially in Extreme Ultra-Violet (EUV) lithography for semiconductor manufacturing.
Innovation Solution
A Zn-based organic coordination nanoparticle is synthesized by mixing a zinc-containing compound, benzoic acid, and a nitrogen-containing organic ligand, with a specific molar ratio, followed by post-treatment to form nanoparticles with a size of 1-4 nm, which interact with a photoacid generator to change solubility under illumination, enabling precise pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional photoresist composition is used, then the photoresist can perform basic lithography functions, but the pattern edge roughness is large and pattern resolution is low
Solution Approach 1:
The patent segments the photoresist system into discrete molecular components: metal ions (Zn²⁺), organic ligands (benzoic acid, nitrogen-containing ligands), and photoacid generators. These components self-assemble into nanoparticles with controlled sizes (1-4 nm), enabling precise pattern formation while simplifying the overall composition compared to traditional multi-component polymer photoresists.
Solution Approach 2:
The patent creates composite photoresist materials by combining metal ions with organic ligands to form coordination nanoparticles. These composite nanoparticles (comprising Zn²⁺, benzoic acid, and nitrogen-containing ligands in specific molar ratios) provide both the structural definition needed for high resolution and the photoresponsiveness required for lithography, achieving superior pattern quality without excessive composition complexity.
2Manufacturing precision
If traditional polymer photoresist is used, then the photoresist provides sufficient solubility change upon exposure, but the wide distribution of photoresist sizes causes difficulty in controlling pattern size and produces defects
Solution Approach 1:
The patent controls the size parameter of photoresist particles by adjusting the molar ratios of metal ions to organic ligands during synthesis. By optimizing these compositional parameters (Zn²⁺:benzoic acid:nitrogen-containing ligand ratios), the patent achieves uniform nanoparticle sizes within the 1-4 nm range, eliminating the wide size distribution problem of traditional polymer photoresists and enabling precise pattern size control.
Solution Approach 2:
The patent imparts uniform local quality to all photoresist particles by ensuring each nanoparticle has the same molecular composition and structure (identical ratios of metal ions to organic ligands). This uniformity in local composition across all particles results in consistent particle sizes and eliminates the size distribution problems that cause pattern defects in traditional photoresists.
3Adaptability or versatility
If photoresist is designed for specific wavelength, then the photoresist achieves optimal performance for that wavelength, but different photoresists are required for different light sources
Solution Approach 1:
The patent designs photoresist nanoparticles with universal applicability by selecting organic ligands (benzoic acid combined with nitrogen-containing ligands) that can absorb across multiple wavelengths including EUV (13.5 nm), DUV (193 nm), and other common lithography wavelengths. This multi-functional design allows a single photoresist composition to work optimally with different light sources, eliminating the need for multiple specialized photoresist formulations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Zn-based organic coordination nanoparticle achieves higher resolution, sensitivity, and lower line roughness compared to traditional polymer and molecular glass photoresists, with improved stability due to the presence of benzoic acid ligands.
Implementation Method 1
interact with a photoacid generator to change solubility under illumination, enabling precise pattern formation
Implementation Method 2
a zinc-containing compound, benzoic acid and a nitrogen-containing organic ligand are mixed and stirred in an organic solvent and then post-treated
Data Source
Figure 1~2A
Figure 2B~3
Figure 4~5
AI summary
A Zn-based organic coordination nanoparticle and a preparation method therefor, a photoresist composition containing same, and a use thereof. The Zn-based organic coordination nanoparticle is obtained by mixing and stirring a zinc-containing compound, preferably zinc acetate, a benzoic acid, and a nitrogen-containing organic ligand in an organic solvent, and then performing post-treatment, and in addition, a nanoparticle having a chemical general formula of [ZnmXn(CH3COO)tYpHq]r is obtained, wherein X is benzoate, CH3COO represents acetate, Y is a nitrogen-containing organic ligand, r is a degree of polymerization, m, n, p, q and r are each independently selected from any integer of 1-20, and t is any integer selected from 0-20. As a photoresist component, the Zn-based organic coordination nanoparticle can achieve more excellent photolithography performance such as high resolution, high sensitivity, and low line roughness.