Zn Coordination Nanoparticle Photoresist for Low-Roughness EUV Patterning
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Solution Overview
Problem
Traditional photoresists exhibit large pattern edge roughness and low pattern resolution, which hinders the advancement of photolithography technology, especially in Extreme Ultra-Violet lithography for semiconductor manufacturing.
Innovation Solution
A Zn-based organic coordination nanoparticle is developed through a specific preparation method involving a zinc-containing compound, benzoic acid, and a nitrogen-containing organic ligand, which interacts with a photoacid generator to alter solubility under illumination, allowing for precise pattern formation with high resolution and low line roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional photoresist materials are used, then the photolithography process can be completed, but the pattern edge roughness is large and the pattern resolution is low
Solution Approach 1:
The patent changes the fundamental chemical parameters of the photoresist material by using Zn-based organic coordination nanoparticles instead of traditional polymer-based photoresists. This parameter change enables achieving pattern resolution below 20 nm while reducing edge roughness, as the nanoparticle size and surface area to volume ratio provide superior lithographic performance
Solution Approach 2:
The patent employs composite material structure by combining zinc-containing compounds with organic ligands (carboxylic acid and nitrogen-containing organic ligand) to form coordination nanoparticles. This composite approach creates a material with both high resolution capability and reduced edge roughness, overcoming the limitations of single-component traditional photoresists
2Ease of manufacture
If traditional polymer-based photoresists are used, then the photoresist can be manufactured, but the composition is complex and requires extremely high control processes
Solution Approach 1:
The patent extracts and eliminates the complex additive components from traditional photoresist formulations. By using Zn-based organic coordination nanoparticles as the active photoresist material, the composition is simplified to essentially two main components (zinc-containing compound and organic ligands), removing the need for multiple functional additives while maintaining photoresist functionality
Solution Approach 2:
The patent segments the photoresist function into discrete nanoparticle units with controlled sizes (1-100 nm). This segmentation allows for independent control of particle properties and simplifies the overall composition compared to macromolecular polymers, enabling easier manufacturing with reduced control process requirements
3Manufacturing precision
If traditional photoresists are used, then the photoresist can be applied, but the size distribution is wide and the pattern formation is difficult to control
Solution Approach 1:
The patent changes the size parameter from macromolecular scale (10 nm-20 nm for traditional photoresists) to nanoparticle scale (1-100 nm for Zn-based coordination nanoparticles). This parameter change provides narrower size distribution and better control over pattern formation, as the smaller, more uniform nanoparticles respond more consistently to lithographic exposure
Solution Approach 2:
The patent applies local quality control by ensuring uniform composition and properties across all nanoparticle units. The coordination nanoparticles have consistent zinc-to-ligand ratios and similar sizes throughout the photoresist layer, creating uniform local properties that translate to precise pattern formation with controlled edge roughness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Zn-based organic coordination nanoparticle achieves higher resolution, sensitivity, and lower line roughness compared to traditional polymer and molecular glass photoresists, enhancing photolithography performance and stability.
Implementation Method 1
interacts with a photoacid generator to alter solubility under illumination
Data Source
AI summary
A Zn-based organic coordination nanoparticle and a preparation method therefor, a photoresist composition containing same, and a use thereof. The Zn-based organic coordination nanoparticle is obtained by mixing and stirring a zinc-containing compound, preferably zinc acetate, a benzoic acid, and a nitrogen-containing organic ligand in an organic solvent, and then performing post-treatment, and in addition, a nanoparticle having a chemical general formula of [ZnmXn(CH3COO)YpHq]r is obtained, wherein X is benzoate, CH3COO represents acetate, Y is a nitrogen-containing organic ligand, r is a degree of polymerization, m, n, p, q and r are each independently selected from any integer of 1-20, and t is any integer selected from 0-20. As a photoresist component, the Zn-based organic coordination nanoparticle can achieve more excellent photolithography performance such as high resolution, high sensitivity, and low line roughness.