ZnO Electrode Etching Selectivity via Si Mo W Doping
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Solution Overview
Problem
The manufacturing of thin film transistors using IZO as source/drain electrodes faces issues with etching selectivity and process complexity, leading to overhang structures, impurity generation, and increased production costs due to the lack of etching selectivity and reliance on undesirable lift-off processes.
Innovation Solution
The use of zinc oxide electrodes containing Si, Mo, and W allows for selective etching of the channel material and source/drain electrodes through a dry etching process using fluorine gas, simplifying the manufacturing process and ensuring reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If IZO is used as source/drain electrodes, then transparency is improved, but etching selectivity deteriorates
Solution Approach 1:
The patent changes the material composition parameters of the electrode by incorporating Si, Mo, or W into the zinc oxide electrode. This compositional modification alters the etching characteristics while maintaining the transparent properties, thereby resolving the contradiction between transparency and etching selectivity.
Solution Approach 2:
The patent uses composite material structure by combining zinc oxide with Si, Mo, or W to create a new electrode material. This composite approach allows the electrode to simultaneously possess the transparency of zinc oxide and the improved etching selectivity provided by the added elements.
2Ease of manufacture
If lift-off process is used to manufacture thin film transistor, then source/drain electrodes can be formed, but process complexity increases
Solution Approach 1:
The patent extracts and eliminates the photoprocess step from the manufacturing sequence by using direct deposition methods with the modified zinc oxide electrode material. This removes the need for photoresist application, patterning, and removal steps that characterize the lift-off process, thereby reducing overall process complexity.
Solution Approach 2:
The modified zinc oxide electrode material provides self-service by enabling direct patterning through its improved etching selectivity. The material itself facilitates the formation of precise electrode structures without requiring external photoresist assistance, simplifying the manufacturing process.
3Reliability
If additional channel protective layer is deposited, then channel protection is improved, but manufacturing cost increases
Solution Approach 1:
The modified zinc oxide electrode material serves multiple functions simultaneously: it provides the conductive electrode function and inherently offers protection to the channel during etching processes. This multi-functionality eliminates the need for separate protective layers, reducing manufacturing cost and process complexity.
Solution Approach 2:
The patent merges the electrode function and channel protection function into a single integrated solution. The modified zinc oxide electrode structure combines both roles, eliminating the need for separate protective layer deposition and reducing overall manufacturing cost.
4Productivity
If etching time is controlled without etching selectivity, then source/drain electrodes can be etched, but etching control deteriorates
Solution Approach 1:
The patent changes the material composition parameters of the electrode by incorporating Si, Mo, or W into the zinc oxide electrode. This compositional modification alters the etching characteristics while maintaining the transparent properties, thereby resolving the contradiction between transparency and etching selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables selective etching of the semiconductor channel and electrodes, simplifying the manufacturing process and enhancing the reliability of the thin film transistor by utilizing zinc oxide electrodes with Si, Mo, and W, which improves etching control and reduces production costs.
Implementation Method 1
a channel material of a semiconductor layer and the source electrode and the drain electrode can be selectively etched
Data Source
AI summary
The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide (ZnO series) electrode having one or more of Si, Mo, and W as a source electrode and a drain electrode, and a method of manufacturing the same.