Zoned Storage Device With Write-Pointer Synchronization
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Solution Overview
Problem
Non-volatile memory devices face reduced lifespan due to frequent garbage collection operations and inefficient wear leveling, leading to decreased available storage capacity.
Innovation Solution
Implementing a storage device with a non-volatile memory divided into zones for sequential data storage and a reserved memory to store preliminary data when write pointer mismatches occur, using a storage controller to manage operations and synchronize data upon command.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If random access is used for data storage, then data access flexibility is improved, but garbage collection frequency increases and device lifespan decreases
Solution Approach 1:
The non-volatile memory is divided into multiple zones (first zone, second zone, third zone) with different access modes. The first zone supports random access for flexible data storage, while the second and third zones support sequential access to minimize garbage collection. This segmentation allows the system to balance between access flexibility and device lifespan by directing different types of data to appropriate zones.
2Reliability
If a large over provisioning region is allocated for garbage collection and wear leveling, then device lifespan is improved, but available storage capacity decreases
Solution Approach 1:
The memory is segmented into zones with different functions: the first zone for random access data storage, the second zone for sequential access data, and the third zone as over-provisioning region. This segmentation allows the over-provisioning region to be smaller than in traditional designs because sequential access in the second zone reduces garbage collection frequency, thereby preserving more capacity for actual data storage while maintaining device lifespan.
Solution Approach 2:
The system performs preliminary actions by pre-allocating specific zones for sequential access (second zone) and over-provisioning (third zone) before data storage operations begin. This preliminary structuring enables the system to handle wear leveling and bad block management more efficiently, extending device lifespan without requiring excessive over-provisioning capacity.
3Reliability
If sequential zone-based storage is implemented, then garbage collection frequency is reduced and device lifespan is improved, but write operation complexity increases
Solution Approach 1:
The storage controller acts as an intermediary between the host device and the zoned memory structure. It automatically determines which zone to use for incoming data, manages write pointers for each zone, and handles the complexity of sequential access operations. This intermediary approach shields the host from the underlying complexity while enabling the lifespan benefits of sequential zone-based storage.
Solution Approach 2:
The system dynamically selects the appropriate zone for data storage based on the characteristics of the incoming data and current zone status. The storage controller can adaptively direct random access data to the first zone and sequential data to the second zone, optimizing device lifespan without requiring complex manual configuration or fixed operational modes.
4Manufacturing precision
If write pointer validation is performed for each operation request, then data consistency is improved, but processing speed decreases
Solution Approach 1:
The system performs write pointer validation selectively rather than uniformly for all operations. For sequential write operations to the second zone, the system relies on the sequential nature of access and validates only at appropriate boundaries, reducing the frequency of validation checks while maintaining data consistency. This partial validation approach preserves data integrity without unnecessarily slowing down processing speed.
Data Source
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AI summary
A storage device according to some example embodiments comprises a non-volatile memory including a first memory including a plurality of zones configured to sequentially store data based on a write pointer, the write pointer indicating a position to write the data, and a second memory configured to store preliminary data to be written in the plurality of zones, and a storage controller configured to receive a plurality of operation requests, each of the plurality of operation requests including a logical block address, a write command, and write data, and store first write data corresponding to a first operation request in the second memory as first preliminary data, if the position of a first logical block address corresponding to the first operation request among the plurality of operation requests and the write pointer does not match.