Zoned Substrate Heating for Critical Dimension Uniformity

Solution Overview

Problem

The challenge of uniformly forming critical dimensions of patterns on enlarged semiconductor wafers or photomasks is exacerbated by substrate warpage and temperature variations, which affect semiconductor manufacturing yield.

Innovation Solution

A substrate processing apparatus with a support plate featuring multiple heating units that independently control temperature zones on the substrate, allowing for uniform heating by adjusting temperatures in transient and steady states to ensure consistent pattern formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the substrate size is enlarged to improve productivity, then the manufacturing output increases, but the temperature uniformity across the substrate deteriorates

Engineering Contradiction:

Improvemanufacturing outputVSAvoidtemperature uniformity

Core Design Contradiction:

ProductivityVSTemperature

Solution Approach 1:

The heater is divided into multiple independent heating units (first heating unit, second heating unit, third heating unit) that can be controlled separately. Each heating unit corresponds to a specific region of the substrate (first region, second region, third region), allowing independent temperature control to achieve uniform heating across the entire large substrate surface.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate are heated to different temperatures during the transient section to compensate for heat distribution issues. The processing circuitry adjusts the heating power of each heating unit according to the specific thermal characteristics of each substrate region, ensuring that each area reaches the appropriate temperature for uniform critical dimension formation.

Inventive Principle:

Principle #3Local quality

2Productivity

If the substrate size is enlarged to improve productivity, then the manufacturing output increases, but the critical dimension uniformity deteriorates

Engineering Contradiction:

Improvemanufacturing outputVSAvoidcritical dimension uniformity

Core Design Contradiction:

ProductivityVSManufacturing precision

Solution Approach 1:

The heater is divided into multiple independent heating units (first heating unit, second heating unit, third heating unit) that can be controlled separately. Each heating unit corresponds to a specific region of the substrate (first region, second region, third region), allowing independent temperature control to achieve uniform heating across the entire large substrate surface.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The processing circuitry dynamically adjusts the heating parameters (power, temperature, duration) of each heating unit during different sections (transient section and steady section) of the heating process. This parameter control ensures that each substrate region reaches and maintains the appropriate temperature for uniform critical dimension formation throughout the pattern formation process.

Inventive Principle:

Principle #35Parameter changes

3Device complexity

If the heating process is simplified to reduce device complexity, then the manufacturing cost decreases, but the temperature control precision deteriorates

Engineering Contradiction:

Improveheating system complexityVSAvoidtemperature control precision

Core Design Contradiction:

Device complexityVSTemperature

Solution Approach 1:

The heater is divided into multiple independent heating units (first heating unit, second heating unit, third heating unit) that can be controlled separately. Each heating unit corresponds to a specific region of the substrate (first region, second region, third region), allowing independent temperature control to achieve uniform heating across the entire large substrate surface.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The processing circuitry controls the heating process by adjusting the power and temperature of each heating unit based on the thermal characteristics and heating requirements of different substrate regions. This control mechanism ensures precise temperature management across the substrate while maintaining a relatively simple heating system structure.

Inventive Principle:

Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus achieves uniform critical dimension formation by controlling temperature variations, enhancing semiconductor manufacturing yield and pattern consistency.

Implementation Method 1

the first unit heats the first portion of the substrate to a first heating temperature, and the second unit heats the second portion of the substrate to a second heating temperature

Methodology Applied

Scientific EffectHeating: Heating

Data Source

PatentUS12568790B2Substrate processing apparatus and method of manufacturing semiconductor device using the same

Publication Date: 2026.03.03 SAMSUNG ELECTRONICS CO LTD

AI summary

Substrate processing apparatuses and methods of manufacturing a semiconductor device using the same may be provided. A substrate processing apparatus includes a heater in a support plate and comprising a first unit configured to heat a first portion of a substrate and a second unit configured to heat a second portion of a substrate, and processing circuitry configured to heat the heater in a transient section such that the first unit heats the first portion of the substrate to a first heating temperature, and the second unit heats the second portion of the substrate to a second heating temperature different from the first heating temperature, the transient section being a section before a temperature of the substrate reaches a steady state, a steady section being a section after the temperature of the substrate reaches the steady state.