ZrO2-In2O3 Sputtering Target Crack Resistance
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Solution Overview
Problem
Conventional sputtering targets for forming ZrO2—In2O3 based protective films for optical storage media are prone to cracking during high-output sputtering, which hampers efficient film formation.
Innovation Solution
A sputtering target with a composition where 90% or more of Zr is in an oxidative product phase combined with In, dispersed in a base material, with specific atomic percentage ranges for Zr and In, is developed to prevent cracking during high-output sputtering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional sputtering targets with Zr as zirconium oxide phase are used for high-output sputtering, then film formation can proceed, but cracks are generated in the target during sputtering
Solution Approach 1:
The invention changes the chemical phase parameter of Zr from zirconium oxide phase to oxidative product phase combined with In. This parameter change fundamentally alters the material properties, enabling the target to withstand high-output sputtering without cracking while maintaining film formation efficiency.
Solution Approach 2:
The invention creates a composite structure where Zr forms an oxidative product phase combined with In, rather than existing as separate zirconium oxide phase. This composite approach at the phase level improves the overall target integrity and crack resistance during high-power sputtering operations.
2Productivity
If high-output sputtering is performed to improve film formation efficiency, then productivity increases, but cracks are generated in the target
Solution Approach 1:
By changing the phase composition parameter of Zr to form an oxidative product phase combined with In, the target can sustain high-output sputtering conditions without structural failure. This parameter change enables higher sputtering power to be applied while maintaining target integrity.
3Ease of manufacture
If Zr is present as zirconium oxide phase in the target, then the target can be manufactured, but cracks occur during high-output sputtering
Solution Approach 1:
The invention changes the phase parameter of Zr from zirconium oxide to oxidative product phase combined with In. This change maintains manufacturability while dramatically improving crack resistance during high-output sputtering operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The target effectively prevents cracking and enhances the efficiency of forming ZrO2—In2O3 protective films for optical storage media, even at high sputtering outputs, by ensuring that a significant percentage of Zr is in an oxidative product phase with In, thereby improving film formation efficiency.
Implementation Method 1
a sputtering target (hereinafter, it will be referred to as a target) having excellent resistance to cracking, used for forming a ZrO2—In2O3 based protective film for an optical storage medium
Data Source
AI summary
A sputtering target for forming a ZrO2—In2O3 based protective film for an optical storage medium, has a component composition made of ZraInbAcO100-a-b-c where “A” represents one, two, or more of Si, Cr, Al, Ce, Ti, and Sn, “a” represents an amount greater than 5 atomic percent and less than 23 atomic percent, “b” represents an amount greater than 12 atomic percent and less than 35 atomic percent, and “c” represents an amount greater than 0 and less than 30 atomic percent, wherein 90% or more of Zr that is included in the sputtering target for forming the protective film for the optical storage medium is in an oxidative product phase in which Zr and In are combined, and is dispersed in a base material of the target.