CD-SEM vs. Scatterometry for Linewidth Measurement
JUL 28, 2025 |
Introduction to Linewidth Measurement Techniques
In the semiconductor industry, precise measurement of feature dimensions is crucial for ensuring the performance and yield of integrated circuits. As device geometries shrink, the demand for accurate and reliable linewidth measurement techniques intensifies. Two widely used methods in this domain are Critical Dimension Scanning Electron Microscopy (CD-SEM) and Scatterometry. Each technique has its strengths and limitations, making them suitable for different applications.
Understanding CD-SEM
CD-SEM is a direct imaging technique that provides high-resolution measurements of feature dimensions. It utilizes a focused electron beam to scan the surface of semiconductor wafers. The interaction of the electron beam with the sample produces signals that are detected and used to form an image. The primary advantage of CD-SEM is its ability to provide high-resolution images with sub-nanometer precision, making it ideal for measuring critical dimensions in advanced technology nodes.
However, CD-SEM is not without its drawbacks. The process can be slow, as it involves scanning line by line to create an image. Additionally, the technique is destructive, as the electron beam can damage sensitive materials. The method is also limited to measuring surface features, making it less effective for complex three-dimensional structures.
Exploring Scatterometry
Scatterometry, on the other hand, is an indirect measurement technique based on the analysis of light scattered from a periodic structure. It is a non-destructive method that can quickly gather data across large areas of a wafer. By analyzing the diffraction patterns produced when light interacts with surface structures, Scatterometry can infer the dimensions of features.
One of the main advantages of Scatterometry is its speed and non-destructive nature. This makes it suitable for in-line process monitoring and high-throughput quality control. It is also capable of measuring complex three-dimensional structures, such as FinFETs and other novel transistor architectures.
Nevertheless, Scatterometry requires an accurate model of the structure being measured, and it may be less precise for features on the order of the wavelength of light used. The technique is also sensitive to variations in material properties and surface roughness, which can affect measurement accuracy.
Comparing CD-SEM and Scatterometry
When selecting between CD-SEM and Scatterometry for linewidth measurement, several factors need to be considered. CD-SEM offers unparalleled resolution and precision, making it indispensable for applications where these attributes are critical. It is particularly suited for research and development environments where detailed imaging of small features is necessary.
Scatterometry, with its speed and non-destructive approach, excels in manufacturing environments where quick turnaround and high throughput are essential. It is an excellent choice for process control and monitoring, especially for complex structures that are challenging to measure with traditional techniques.
Both methods may also be used complementarily, with CD-SEM providing detailed reference measurements that can improve the accuracy of Scatterometry models. By leveraging the strengths of each method, manufacturers can achieve comprehensive and effective linewidth measurement strategies.
Conclusion
In the world of semiconductor manufacturing, both CD-SEM and Scatterometry play crucial roles in linewidth measurement. Each technique offers unique advantages that cater to different application needs. CD-SEM provides unmatched precision and resolution, while Scatterometry offers speed and non-destructive measurement capabilities. Understanding the strengths and limitations of each method is essential for optimizing process control and ensuring the successful production of next-generation semiconductor devices. As technology continues to evolve, ongoing advancements in both techniques will likely further enhance their capabilities and applications in the semiconductor industry.As photolithography continues to push the boundaries of nanoscale patterning, from EUV and DUV advancements to multi-patterning and maskless lithography, innovation cycles are accelerating—and the IP landscape is becoming more complex than ever.
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