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EUV mask vs DUV mask: Materials, challenges, and inspection methods

JUL 28, 2025 |

Introduction

In the world of semiconductor manufacturing, photomasks play a crucial role in the lithography process, which is fundamental to producing integrated circuits. Two primary technologies used in this domain are Extreme Ultraviolet (EUV) and Deep Ultraviolet (DUV) lithography. Both have distinct advantages and challenges, particularly concerning the materials used, the challenges faced in their application, and the inspection methods employed to ensure their quality. This article delves into the differences between EUV masks and DUV masks, highlighting the key aspects that distinguish these two technologies.

Materials Used in EUV and DUV Masks

EUV Masks: The technological leap that EUV lithography represents also extends to the materials used in EUV masks. These masks are typically made from a low thermal expansion material (LTEM) substrate, covered with multiple layers of molybdenum and silicon. The multilayer structure is crucial as it reflects the EUV light, which has a much shorter wavelength than DUV light. On top of these reflective layers, an absorber layer, often made of tantalum-based compounds, is used to define the pattern.

DUV Masks: DUV masks, on the other hand, usually utilize a quartz substrate due to its excellent transparency to DUV wavelengths, typically around 248 nm or 193 nm. The pattern on DUV masks is created using a chrome layer, which acts as an opaque material, contrasted against the transparent quartz. The difference in material requirements between EUV and DUV masks is primarily driven by the difference in their operational wavelengths and the mechanisms of light interaction with these materials.

Challenges in EUV and DUV Mask Application

EUV Masks: One of the major challenges with EUV masks is their susceptibility to defects. The multilayer structure, although necessary for reflecting EUV light, can introduce complexities in manufacturing, leading to defects such as phase defects. Additionally, the shorter wavelength of EUV light requires extremely precise patterning, which can be difficult to achieve and maintain.

DUV Masks: While DUV masks have been a staple in the industry for many years, they also face challenges, particularly as circuit designs become more intricate and smaller in scale. One significant challenge is achieving the fine resolution required for advanced nodes without introducing defects. Additionally, as the industry pushes towards smaller nodes, the limitations of DUV lithography become more pronounced.

Inspection Methods for EUV and DUV Masks

EUV Mask Inspection: Given the sensitivity of EUV masks to defects, inspection methods need to be both precise and comprehensive. Advanced inspection tools such as actinic inspection systems are used, which employ EUV light to detect phase defects or pattern imperfections. These systems are capable of identifying defects in the multilayer substrates and the absorber layers, ensuring the masks are of high quality before they are used.

DUV Mask Inspection: Inspection of DUV masks often involves optical inspection systems that use light within the DUV spectrum itself. These systems are adept at detecting defects such as pinholes, contamination, and pattern deviations. As the industry evolves, there is a growing demand for more advanced inspection technologies that can keep up with the increasing complexity and smaller feature sizes of semiconductor devices.

Conclusion

EUV and DUV masks are both integral to the semiconductor manufacturing process, each with its unique materials, challenges, and inspection methods. As the industry continues to push towards smaller nodes and higher efficiencies, understanding these differences is critical for anyone involved in semiconductor fabrication. While EUV lithography promises higher resolution and smaller feature sizes, it also presents significant challenges in mask manufacturing and inspection. Conversely, DUV lithography, with its well-established processes, continues to be a workhorse for many applications, even as it faces challenges in scaling down to ever-smaller nodes. These technological nuances underscore the ongoing innovation and adaptation required in the field of semiconductor manufacturing.

As photolithography continues to push the boundaries of nanoscale patterning, from EUV and DUV advancements to multi-patterning and maskless lithography, innovation cycles are accelerating—and the IP landscape is becoming more complex than ever.

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