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Resist strip for positive vs negative-tone resists: What’s different?

JUL 28, 2025 |

Understanding Positive and Negative-Tone Resists

When diving into the world of photolithography, one quickly encounters the terms positive-tone and negative-tone resists. These materials are crucial in defining the patterns on semiconductor wafers, which are foundational to creating integrated circuits and various micro-scale devices. Although they share a common goal, their mechanisms and characteristics differ significantly, especially when considering the resist strip process.

Positive-Tone Resists: How They Work

Positive-tone resists are materials that become more soluble in developer solutions after exposure to light. Essentially, the exposed regions of the resist are removed during development, while the unexposed areas remain. This creates a pattern on the substrate that mirrors the mask used during exposure. The process allows for high-resolution patterning, making these resists ideal for applications requiring intricate details.

Negative-Tone Resists: A Different Mechanism

In contrast, negative-tone resists work by becoming less soluble when exposed to light. The regions hit by the light harden and resist the developer solution, while the unexposed areas are washed away. This method results in a pattern that is the inverse of the mask. Negative-tone resists often exhibit better chemical resistance and are sometimes used for applications involving harsher environments or where high aspect ratios are desired.

The Role of Resist Stripping

Resist stripping is a crucial step in the photolithography process. After the desired pattern has been transferred onto the substrate, the remaining resist needs to be removed to proceed with further processing. This step must be carefully managed to avoid damaging the underlying layers or altering the patterned features.

Stripping Positive-Tone Resists

For positive-tone resists, the stripping process is generally more straightforward due to the nature of the material. These resists typically consist of polymers that break down easily in various stripping solutions. Wet chemical methods are often employed, where a solvent or a caustic solution dissolves the resist away. Care must be taken to ensure that the developer used in previous steps is fully neutralized, to prevent any unintended reactions during stripping.

Stripping Negative-Tone Resists

Negative-tone resists present more of a challenge during the stripping process. Due to their hardened, cross-linked nature after exposure, removing them requires stronger solvents or more aggressive methods. Plasma ashing is a common technique used here, where the resist is bombarded with ions in a low-pressure plasma environment, effectively breaking apart the polymer chains. The choice of stripping method must be balanced against potential damage to the device's delicate features.

Challenges and Considerations

Both positive and negative-tone resists present unique challenges during the stripping process. For positive-tone resists, the risk of damaging fine features or leaving residue is a concern. Ensuring complete removal without affecting the underlying layers requires precise control over the chemical process.

For negative-tone resists, the primary challenge is the robustness of the material. The stripping process needs to be aggressive enough to remove the resist but gentle enough to preserve the integrity of the substrate. This often involves a combination of chemical and physical methods, tailored to the specific resist type and application.

Conclusion

Understanding the differences between positive and negative-tone resists is key to optimizing the photolithography process. Each type of resist offers distinct advantages and poses unique challenges, particularly when it comes to resist stripping. By carefully selecting the appropriate resist and stripping method, manufacturers can achieve the precision required for modern semiconductor devices while minimizing the risk of damage. As technology advances, continued innovation in resist materials and stripping techniques will be essential to meet the ever-increasing demands of the microelectronics industry.

As photolithography continues to push the boundaries of nanoscale patterning, from EUV and DUV advancements to multi-patterning and maskless lithography, innovation cycles are accelerating—and the IP landscape is becoming more complex than ever.

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