Wafer Pre-Clean Methods: RCA Clean vs. SPM vs. Diluted HF
JUL 28, 2025 |
When it comes to wafer processing in semiconductor manufacturing, cleanliness is paramount. Pre-cleaning is a critical step to remove contaminants and ensure the successful deposition of various thin films during device fabrication. Several methods are commonly employed in the industry, with RCA Clean, Sulfuric Peroxide Mix (SPM), and Diluted Hydrofluoric Acid (HF) being the most prominent. Each of these methods has distinct advantages, making them suitable for specific applications.
Understanding Wafer Pre-Cleaning
Wafer pre-cleaning is an essential process aimed at preparing the silicon wafer surface by removing organic, inorganic, and metallic contaminants. This step is necessary to improve the adhesion of subsequent layers, enhance the quality of the films deposited, and ultimately ensure the performance and reliability of the semiconductor devices.
RCA Clean: A Comprehensive Approach
The RCA Clean is one of the most commonly used wafer cleaning methods. Developed by Werner Kern at the RCA Corporation in the 1960s, it consists of multiple steps designed to target different types of contaminants. The process begins with the removal of organic residues using the Standard Clean 1 (SC-1) step, which involves a mixture of ammonium hydroxide, hydrogen peroxide, and water. This step effectively removes organics and some particulates through the combined action of chemical oxidation and mechanical lifting.
The second step, known as Standard Clean 2 (SC-2), involves a solution of hydrochloric acid, hydrogen peroxide, and water. This step is designed to eliminate metallic contaminants by forming soluble metal complexes that are rinsed away. RCA Clean is praised for its thoroughness and reliability, making it a go-to method for many semiconductor manufacturers.
Sulfuric Peroxide Mix (SPM): An Aggressive Solution
SPM is a powerful cleaning solution composed of sulfuric acid and hydrogen peroxide. It is particularly effective at removing organic contaminants and photoresist residues. The exothermic reaction between sulfuric acid and hydrogen peroxide generates heat, further enhancing the cleaning effectiveness. This aggressive treatment can be especially useful in scenarios where heavy organic contamination is present.
One of the advantages of SPM is its ability to clean surfaces quickly while leaving them hydrophilic, which improves subsequent processing steps. However, due to its corrosive nature, careful handling and appropriate safety measures are essential when using SPM.
Diluted Hydrofluoric Acid (HF): Precision in Etching
Diluted HF is primarily used for its ability to remove native oxide layers from silicon surfaces. HF selectively etches silicon dioxide without significantly affecting the underlying silicon, making it a precise tool for oxide thinning or removal. This property is particularly valuable in processes where maintaining the integrity of the silicon substrate is crucial.
While HF is adept at oxide removal, it is not as effective in removing organic or metallic contaminants. Therefore, it is often used in combination with other cleaning steps like RCA Clean or SPM to achieve comprehensive wafer cleanliness.
Choosing the Right Method
The selection of a wafer pre-cleaning method depends on several factors, including the types of contaminants present, the specific requirements of the subsequent processing steps, and the overall manufacturing process flow. RCA Clean is often chosen for its thoroughness and ability to handle a wide range of contaminants, while SPM is preferred for its power in dealing with organic residues. Diluted HF is typically used as a final step for precise oxide removal.
In practice, a combination of these methods may be employed to achieve optimal results. It's also important to consider the environmental and safety implications of each method, as some chemicals involved can be hazardous and require proper handling and disposal.
Final Thoughts
Wafer pre-cleaning is a crucial step in the semiconductor manufacturing process, and the choice of cleaning method can significantly impact the quality and reliability of the final product. Understanding the strengths and limitations of RCA Clean, SPM, and Diluted HF allows manufacturers to tailor their cleaning processes to meet specific needs and ensure the highest standards of wafer cleanliness. As technology continues to advance, the development of new and improved cleaning methods will undoubtedly play a pivotal role in the evolution of semiconductor manufacturing.As photolithography continues to push the boundaries of nanoscale patterning, from EUV and DUV advancements to multi-patterning and maskless lithography, innovation cycles are accelerating—and the IP landscape is becoming more complex than ever.
Patsnap Eureka, our intelligent AI assistant built for R&D professionals in high-tech sectors, empowers you with real-time expert-level analysis, technology roadmap exploration, and strategic mapping of core patents—all within a seamless, user-friendly interface.
Whether you're optimizing lithography depth of focus or exploring new materials for sub-3nm nodes, Patsnap Eureka empowers you to make smarter decisions, faster—combining AI efficiency with domain-specific insight.
💡 Start your free trial today and see how Eureka transforms how you discover, evaluate, and act on innovation in photolithography—from idea to impact.

