Bidirectional ESD Protection with Low Capacitance Semiconductor Design
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Summary
Problems
Prior semiconductor devices for bidirectional electrostatic discharge (ESD) protection are inadequate due to high capacitance, increased package size, and manufacturing costs, with existing solutions being unsatisfactory in terms of ESD performance and reliability.
Innovation solutions
A semiconductor device structure utilizing a large area Zener diode at the back side of a substrate in series with a low capacitance steering diode at the top side, combined in parallel with another low capacitance steering diode and a sub-surface Zener diode, allowing for bi-directional ESD protection within a single die, minimizing die area and I/O requirements.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If two separate dies or two I/Os are used to make ESD protection devices bi-directional, then bidirectional protection is achieved, but device complexity and manufacturing costs increase
Why choose this principle:
The patent combines multiple ESD protection functions into a single semiconductor die by integrating a first ESD protection device with a second ESD protection device in series connection. This merging approach eliminates the need for separate dies and reduces I/O requirements while maintaining bidirectional protection capability.
Principle concept:
If two separate dies or two I/Os are used to make ESD protection devices bi-directional, then bidirectional protection is achieved, but device complexity and manufacturing costs increase
Why choose this principle:
The single semiconductor die is designed to perform multiple ESD protection functions simultaneously – protecting against both positive and negative voltage transients through the series-connected ESD devices. This multi-functional design allows one die to replace what would traditionally require two separate components.
Application Domain
Data Source
AI summary:
A semiconductor device structure utilizing a large area Zener diode at the back side of a substrate in series with a low capacitance steering diode at the top side, combined in parallel with another low capacitance steering diode and a sub-surface Zener diode, allowing for bi-directional ESD protection within a single die, minimizing die area and I/O requirements.
Abstract
In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.