Decoupling Capacitors for Stable Semiconductor Power Supply
Here’s PatSnap Eureka !
Summary
Problems
As semiconductor devices continue to shrink in feature size, they face challenges in integrating more components in a given area while maintaining stable power supply lines and electrical ground lines, leading to issues with device performance and density.
Innovation solutions
The formation of decoupling capacitors using high-k dielectric materials in the interconnect structure on both the front and backside of semiconductor chips, specifically routing power supply and ground lines through the backside interconnect structure and embedding decoupling capacitors between these lines to stabilize power supply and improve device density.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but maintaining stable power supply lines and ground lines becomes more difficult
Why choose this principle:
The patent utilizes the backside of the semiconductor chip as an additional dimension for routing power supply and ground lines. By forming interconnect structures on both the front and back sides of the chip, the design provides separate dedicated paths for power and ground, preventing noise coupling and maintaining stability even as feature sizes are reduced and integration density increases.
Principle concept:
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but maintaining stable power supply lines and ground lines becomes more difficult
Why choose this principle:
The patent segments the power supply and ground routing into separate dedicated paths on the backside of the chip. Instead of sharing common interconnect lines, power lines and ground lines are physically separated and routed independently, which prevents electromagnetic interference and maintains signal integrity in high-density integration scenarios.
Application Domain
Data Source
AI summary:
The formation of decoupling capacitors using high-k dielectric materials in the interconnect structure on both the front and backside of semiconductor chips, specifically routing power supply and ground lines through the backside interconnect structure and embedding decoupling capacitors between these lines to stabilize power supply and improve device density.
Abstract
Methods of forming decoupling capacitors in interconnect structures formed on backsides of semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a device includes a device layer including a first transistor; a first interconnect structure on a front-side of the device layer; a second interconnect structure on a backside of the device layer, the second interconnect structure including a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a first conductive layer including a first conductive line electrically connected to the source/drain region of the first transistor through the contact; and a second dielectric layer adjacent the first conductive line, the second dielectric layer including a material having a k-value greater than 7.0, a first decoupling capacitor including the first conductive line and the second dielectric layer.