ESD-Protected LED Design with Enhanced Light Efficiency
Here’s PatSnap Eureka !
Summary
Problems
Light emitting devices (LEDs) face issues with shortened lifetime and reliability due to current crowding and damage from electrostatic discharge (ESD), with existing solutions like zener diodes causing light absorption problems.
Innovation solutions
A light emitting device structure with a substrate, conductive type semiconductor layers, a light transmissive electrode with a stepped portion, and a dielectric layer to improve current spreading and prevent ESD damage without light absorption loss, featuring a metal/insulator/semiconductor (MIS) capacitor structure to manage electric fields.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If a zener diode is mounted to protect against ESD, then ESD damage is prevented, but light absorption occurs
Why choose this principle:
The patent extracts the ESD protection function from a separate zener diode component and integrates it into the LED chip structure itself through a capacitor connected between the anode and cathode. This eliminates the need for external ESD protection components that would block light, while maintaining ESD protection functionality.
Principle concept:
If a zener diode is mounted to protect against ESD, then ESD damage is prevented, but light absorption occurs
Why choose this principle:
The patent merges the ESD protection function with the LED chip structure by integrating a capacitor directly into the chip. The capacitor is formed using conductive layers and dielectric materials within the same semiconductor substrate, combining light emission and ESD protection in a single integrated structure.
Application Domain
Data Source
AI summary:
A light emitting device structure with a substrate, conductive type semiconductor layers, a light transmissive electrode with a stepped portion, and a dielectric layer to improve current spreading and prevent ESD damage without light absorption loss, featuring a metal/insulator/semiconductor (MIS) capacitor structure to manage electric fields.
Abstract
Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate, the light emitting structure exposing a portion of the first conductive type semiconductor layer upward, a light transmissive electrode having a stepped portion on the second conductive type semiconductor layer, a second electrode on the light transmissive electrode, and a first electrode on the exposed first conductive type semiconductor layer.