Enhanced FeRAM Design with Electrostrictive Layers for Better Data Retention
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Summary
Problems
Current semiconductor technologies face challenges in integrating high-performance non-volatile memory with logic circuits within a single chip, particularly in achieving improved polarization switching and data storage retention in ferroelectric random-access memory (FeRAM) devices.
Innovation solutions
Incorporating an electrostrictive layer into the dielectric stack of FeRAM cells, which enhances polarization switching and stability, allowing for reduced operation voltage and increased data storage retention, by using a capacitor structure with a ferroelectric layer and an electrostrictive layer between electrodes.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If a conventional dielectric stack without electrostrictive layer is used in FeRAM cells, then the device structure is simpler and manufacturing is easier, but polarization switching performance and data storage retention are insufficient
Why choose this principle:
The patent applies composite materials by combining ferroelectric material and electrostrictive material in a multi-layer dielectric stack. The ferroelectric layer provides polarization switching capability while the electrostrictive layer enhances data retention through its unique piezoelectric properties. This composite structure resolves the contradiction by achieving improved reliability through material composition rather than simple structural expansion.
Principle concept:
If a conventional dielectric stack without electrostrictive layer is used in FeRAM cells, then the device structure is simpler and manufacturing is easier, but polarization switching performance and data storage retention are insufficient
Why choose this principle:
The dielectric stack is structured as nested layers with the electrostrictive layer positioned between the ferroelectric layer and the bottom electrode. This nesting arrangement allows the electrostrictive layer to provide its retention-enhancing effect without adding excessive structural complexity, as it is integrated within the existing capacitor architecture rather than as a separate external component.
Application Domain
Data Source
AI summary:
Incorporating an electrostrictive layer into the dielectric stack of FeRAM cells, which enhances polarization switching and stability, allowing for reduced operation voltage and increased data storage retention, by using a capacitor structure with a ferroelectric layer and an electrostrictive layer between electrodes.
Abstract
A semiconductor structure includes a substrate; a first dielectric layer disposed over the substrate; a transistor disposed within the first dielectric layer; a second dielectric layer disposed over the first dielectric layer; and a capacitor disposed within the second dielectric layer and electrically connected to the transistor, wherein the capacitor includes a first electrode, a dielectric stack disposed over the first electrode, and a second electrode disposed over the dielectric stack, the dielectric stack includes a ferroelectric layer and an electrostrictive layer. Further, a method of manufacturing a semiconductor structure includes disposing an electrostrictive material over a first electrode layer; disposing a ferroelectric material over the first electrode layer; removing a portion of the ferroelectric material to form the ferroelectric material; and removing a portion of the electrostrictive material to form the electrostrictive layer.