Efficient Heat Dissipation in 3D Stacked Semiconductor Packages
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Summary
Problems
In three-dimensional (3D) stacked semiconductor device packages, heat dissipation from the die to the main board is inefficient due to a long heat dissipation path, leading to heat accumulation and potential die failure.
Innovation solutions
A conductive structure is integrated between the upper and lower circuit layers to directly transfer heat from the electronic components to the lower substrate, reducing the heat dissipation path and providing electromagnetic shielding, while also supporting the upper substrate to minimize warpage.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If heat flows through the upper substrate, interposer and lower substrate to reach the main board, then the heat dissipation path is established, but the path is too long causing heat accumulation
Why choose this principle:
The heat dissipation path is segmented into multiple independent paths: one through the substrate and interposer, and another direct path through the conductive structure embedded in the lower substrate. This segmentation allows heat to bypass the long traditional path and take a shorter route, reducing heat accumulation at critical points.
Principle concept:
If heat flows through the upper substrate, interposer and lower substrate to reach the main board, then the heat dissipation path is established, but the path is too long causing heat accumulation
Why choose this principle:
A conductive structure is introduced as an intermediary element within the lower substrate to facilitate direct heat transfer from the die to the main board. This intermediary creates a thermal shortcut that complements the traditional heat dissipation path, effectively reducing the overall thermal resistance and path length.
Application Domain
Data Source
AI summary:
A conductive structure is integrated between the upper and lower circuit layers to directly transfer heat from the electronic components to the lower substrate, reducing the heat dissipation path and providing electromagnetic shielding, while also supporting the upper substrate to minimize warpage.
Abstract
A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a first circuit layer, a second circuit layer under the first circuit layer, a first electronic component between the first circuit layer and the second circuit layer and connected to the first circuit layer and a sub-package between the first circuit layer and the second circuit layer and connected to the second circuit layer. The sub package comprises a second electronic component under the first electronic component and a conductive structure configured to dissipate heat generated from the first electronic component.