Integrated ESD Protection for Radiation-Emitting Semiconductor Chips
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Summary
Problems
Radiation-emitting semiconductor chips are vulnerable to electrostatic discharge (ESD) damage, which can be mitigated but often requires additional diodes increasing complexity and costs, or buffer layers that may not fully address the issue.
Innovation solutions
A radiation-emitting semiconductor chip design with a semiconductor body featuring a separate protective diode region integrated into the chip, which is electrically conductively connected to the emission region, allowing for ESD protection without additional external diodes and maintaining the chip's functionality.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If an additional protective diode is mounted outside the semiconductor chip, then electrostatic discharge protection is improved, but device complexity and mounting space requirements increase
Why choose this principle:
The protective diode function is merged with the emission region by laterally separating the active areas while sharing the same semiconductor layer sequence and electrical connections. The first semiconductor layer forms both the emission region active area and the protective diode active area, eliminating the need for separate protective diode mounting.
Principle concept:
If an additional protective diode is mounted outside the semiconductor chip, then electrostatic discharge protection is improved, but device complexity and mounting space requirements increase
Why choose this principle:
The semiconductor layer sequence serves multiple functions: it generates radiation in the emission region and provides electrostatic discharge protection in the protective diode region. The same layer structure is used for both radiation generation and ESD protection, making the system more efficient.
Application Domain
Data Source
AI summary:
A radiation-emitting semiconductor chip design with a semiconductor body featuring a separate protective diode region integrated into the chip, which is electrically conductively connected to the emission region, allowing for ESD protection without additional external diodes and maintaining the chip's functionality.
Abstract
A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.