High-Purity Copper-Manganese Alloy for Reliable Semiconductor Sputtering
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Summary
Problems
Existing semiconductor copper alloy line sputtering targets fail to adequately prevent particle generation during sputtering, which affects the quality and reliability of semiconductor devices as they miniaturize and integrate, and conventional diffusion barrier layers are insufficient in preventing copper diffusion contamination.
Innovation solutions
A high-purity copper-manganese-alloy sputtering target with controlled amounts of Mn and C, where the Mn content ranges from 0.05 to 20 wt.% and C is limited to 2 wt ppm or less, is used to significantly reduce particle generation and enhance self-diffusion suppression, thereby forming a semiconductor copper alloy line with improved electron migration and corrosion resistance.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If conventional copper-manganese alloy sputtering targets are used, then self-diffusion suppression function is provided, but particle generation during sputtering is not sufficiently suppressed
Why choose this principle:
The patent applies parameter changes by precisely controlling the carbon content to 2 wt ppm or less and maintaining specific manganese content (0.05 to 20 wt.%) in the copper-manganese alloy. This parameter optimization resolves the contradiction by suppressing particle generation during sputtering while preserving the self-diffusion suppression function, thereby improving semiconductor device quality without sacrificing reliability
Principle concept:
If conventional copper-manganese alloy sputtering targets are used, then self-diffusion suppression function is provided, but particle generation during sputtering is not sufficiently suppressed
Why choose this principle:
The patent applies local quality by focusing on the specific local property of carbon content distribution and purity in the sputtering target material. By controlling carbon content to 2 wt ppm or less locally within the target structure, the patent suppresses particle generation at the sputtering surface while maintaining the overall alloy composition for self-diffusion suppression, thus resolving the contradiction between particle suppression and device reliability
Application Domain
Data Source
AI summary:
A high-purity copper-manganese-alloy sputtering target with controlled amounts of Mn and C, where the Mn content ranges from 0.05 to 20 wt.% and C is limited to 2 wt ppm or less, is used to significantly reduce particle generation and enhance self-diffusion suppression, thereby forming a semiconductor copper alloy line with improved electron migration and corrosion resistance.
Abstract
Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt.% of Mn, 2 wt ppm or less of C, and the remainder being Cu and inevitable impurities, wherein in formation of a film on a wafer by sputtering the target, the number of particles composed of C, at least one element selected from Mn, Si, and Mg, or a compound composed of C and at least one element selected from Mn, Si, and Mg and having a diameter of 0.20 µm or more is 30 or less on average. Particle generation during sputtering can be effectively suppressed by thus adding an appropriate amount of Mn element to copper and controlling the amount of carbon. In particular, a high-purity copper-manganese-alloy sputtering target that is useful for forming semiconductor copper alloy line having a self-diffusion suppression function is provided.