Laser-Based Wafer Splitting for Efficient Semiconductor Processing
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Summary
Problems
Existing semiconductor wafer production processes are inefficient and costly due to high kerf-loss during slicing and the complexity of integrating semiconductor work piece splitting into standard manufacturing processes.
Innovation solutions
A method involving the use of at least two laser beams to create a separation zone in semiconductor work pieces by modifying the material's physical properties, followed by applying an external force to propagate cracks along the zone, thereby splitting the work piece into two separate pieces.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If standard slicing techniques are used to produce semiconductor wafers, then wafer production is achieved, but kerf-loss is high and production costs are significant
Why choose this principle:
The patent applies segmentation by dividing the wafer into multiple thinner wafers through controlled cracking. The laser creates a separation zone with modified physical properties that allows the original wafer to be split into multiple usable layers, thereby reducing material waste and kerf-loss while increasing productivity from a single wafer.
Principle concept:
If standard slicing techniques are used to produce semiconductor wafers, then wafer production is achieved, but kerf-loss is high and production costs are significant
Why choose this principle:
The patent uses preliminary action by first creating a separation zone within the wafer using laser modification before applying external force to propagate cracks. This pre-modification of the material structure enables controlled splitting and reduces material loss during the separation process.
Application Domain
Data Source
AI summary:
A method involving the use of at least two laser beams to create a separation zone in semiconductor work pieces by modifying the material's physical properties, followed by applying an external force to propagate cracks along the zone, thereby splitting the work piece into two separate pieces.
Abstract
A method of processing a monocrystalline semiconductor work piece includes: applying pulses of laser light to a first main surface of the monocrystalline semiconductor work piece, the pulses of laser light penetrating the first main surface and forming modified regions in a separation zone within the monocrystalline semiconductor work piece, each modified region being delimited by a subcritical crack that surrounds an inner part in which the monocrystallinity of the semiconductor work piece is altered; controlling the pulses of laser light such that the subcritical cracks of adjacent ones of the modified regions are non-overlapping for at least half of the modified regions formed in the monocrystalline semiconductor work piece; and after inducing the subcritical cracks, forming at least one crack that connects the subcritical cracks. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.