Groove-Based Warpage Control in Semiconductor Packaging
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Summary
Problems
Panel warping during semiconductor device packaging poses challenges in panel-level packaging, affecting yield, reliability, and handling, particularly due to coefficient of thermal expansion (CTE) mismatches.
Innovation solutions
Forming grooves on the packaging substrate with predetermined dimensions to compensate for CTE mismatches, which are configured to surround each packaging site, and subsequently forming singulation cuts to control panel warpage while maintaining minimal costs.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If panel-level packaging is used to improve productivity, then manufacturing efficiency increases, but panel warpage occurs due to CTE mismatches affecting yield and reliability
Why choose this principle:
The packaging substrate is divided into multiple individual packaging sites separated by grooves. Each packaging site is isolated from others, allowing independent control of thermal expansion and stress distribution. This segmentation prevents warpage propagation across the entire panel while maintaining panel-level packaging efficiency.
Principle concept:
If panel-level packaging is used to improve productivity, then manufacturing efficiency increases, but panel warpage occurs due to CTE mismatches affecting yield and reliability
Why choose this principle:
Each packaging site is designed with specific local characteristics including groove dimensions (width and depth) tailored to compensate for CTE mismatches at that location. The grooves create localized stress relief zones that address thermal expansion issues without affecting the entire panel uniformly.
Application Domain
Data Source
AI summary:
Forming grooves on the packaging substrate with predetermined dimensions to compensate for CTE mismatches, which are configured to surround each packaging site, and subsequently forming singulation cuts to control panel warpage while maintaining minimal costs.
Abstract
A method of manufacturing a semiconductor device packaging panel is provided. The method includes forming a packaging substrate having a plurality of grooves orthogonally arranged and substantially surrounding a plurality of package sites. A plurality of semiconductor die is affixed on a first major side of the packaging substrate. Each semiconductor die of the plurality of semiconductor die is affixed at a unique package site of the plurality of package sites. An encapsulant encapsulates the first major side of the packaging substrate such that each semiconductor die of the plurality of semiconductor die is encapsulated by the encapsulant. A singulation cut is formed along each groove of the plurality of grooves of the packaging substrate to form individual semiconductor device units.