Semiconductor Substrate Bonding: Warpage Mitigation Solution
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Summary
Problems
The challenge in manufacturing semiconductor devices lies in appropriately bonding multiple substrates, particularly due to warpage issues caused by differences in thermal expansion coefficients and stress, which can lead to misalignment and bonding difficulties.
Innovation solutions
A method involving the use of a supporting substrate with lower rigidity than the primary substrate to mitigate warpage by absorbing stress, followed by precise alignment and bonding of substrates with varying warpage levels, and finally removing the supporting substrate to form a multi-stack array structure.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If multiple substrates are bonded directly, then manufacturing process is simple, but warpage causes misalignment and bonding difficulties
Why choose this principle:
A supporting substrate is introduced as an intermediary component between the first substrate and the second substrate. The supporting substrate has a warpage opposite to that of the first substrate, which compensates for the warpage of the first substrate when bonded together. This intermediary structure enables precise alignment and bonding of the first substrate to the second substrate without direct contact, solving the alignment precision problem while maintaining manufacturing simplicity.
Principle concept:
If supporting substrate with lower rigidity is used, then warpage is absorbed effectively, but structural strength is reduced
Why choose this principle:
The rigidity parameter of the supporting substrate is deliberately changed to be lower than that of the first substrate. This parameter change allows the supporting substrate to effectively absorb and compensate for warpage through elastic deformation. The supporting substrate is designed with specific material properties and thickness to achieve the optimal balance between warpage absorption capability and structural strength required for the bonding process.
Application Domain
Data Source
AI summary:
A method involving the use of a supporting substrate with lower rigidity than the primary substrate to mitigate warpage by absorbing stress, followed by precise alignment and bonding of substrates with varying warpage levels, and finally removing the supporting substrate to form a multi-stack array structure.
Abstract
A method for manufacturing a semiconductor device, a first structure is formed on a first substrate. A first bonded body is formed by bonding a supporting substrate lower in rigidity than the first substrate to a first principal surface, on which the first structure is formed, of the first substrate. The first substrate is removed from the first bonded body. A second structure is formed on a second substrate. A third structure is formed on a third substrate. A second bonded body is formed by bonding a second principal surface, on which the second structure is formed, of the second substrate to a third principal surface, on which the third structure is formed, of the third substrate. The second substrate is removed from the second bonded body. A third bonded body is formed by bonding a fourth principal surface, which is exposed after the first substrate is removed, of the first bonded body to a fifth principal surface, which is exposed after the second substrate is removed, of the second bonded body. The supporting substrate is removed from the third bonded body.