Spin-On Spacer Solutions for Precise Lithography Patterns
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Summary
Problems
Current double-patterning techniques for microelectronic structures, such as self-aligned spacer technology and resolution enhancement lithography assisted by chemical shrink (RELACS), are inefficient and lack control over critical dimension due to complex processes and chemical interactions that distort features, especially for forming small lines.
Innovation solutions
A two-step process involving a spin-on carbon layer and a hard mask layer, where a shrinkable composition is applied and heated to form a conformal coating, which is then etched to create pre-spacers that double or triple the frequency of dense lines without distorting the original pattern, using a novel combination of spin-coating, baking, and etching steps.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If CVD processes are used to apply conformal coating for spacer formation, then the coating can be applied conformally, but the process requires many steps making it costly and inefficient
Why choose this principle:
The patent replaces the CVD (chemical vapor deposition) process with a spin-coating process to apply the conformal coating. Spin-coating is a simpler, more efficient mechanical process that reduces the number of process steps while maintaining conformal coating quality, directly addressing the contradiction between ease of manufacture and productivity
Principle concept:
If CVD processes are used to apply conformal coating for spacer formation, then the coating can be applied conformally, but the process requires many steps making it costly and inefficient
Why choose this principle:
The patent changes the process parameters from CVD conditions to spin-coating conditions, including controlling spin speed, coating thickness, and subsequent thermal processing parameters. This parameter change enables the same conformal coating function to be achieved through a simpler, more productive process
Application Domain
Data Source
AI summary:
A two-step process involving a spin-on carbon layer and a hard mask layer, where a shrinkable composition is applied and heated to form a conformal coating, which is then etched to create pre-spacers that double or triple the frequency of dense lines without distorting the original pattern, using a novel combination of spin-coating, baking, and etching steps.
Abstract
Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.