Storage Layers Prevent Wafer Cracking in Semiconductor Bonding
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Summary
Problems
The scaling down of semiconductor devices leads to wafer cracking issues during the bonding anneal process due to the formation of water vapor and hydrogen byproducts, which create stress and bubbles at the interface of the bonding layers.
Innovation solutions
The use of storage layers, specifically carbon-containing porous materials, to store the water vapor and hydrogen byproducts generated during the bonding anneal, thereby reducing stress and preventing wafer cracking. These storage layers can include nitrogen as an etch stop layer and have a controlled carbon concentration to optimize porosity and density.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If wafer bonding is performed during scaling down of semiconductor devices, then device integration density is improved, but wafer cracking occurs due to stress from water vapor and hydrogen byproducts
Why choose this principle:
A storage layer is introduced as an intermediary component between the bonding layer and the wafer. This storage layer absorbs and stores the water vapor and hydrogen byproducts generated during bonding anneal, preventing them from accumulating at the bonding interface and causing stress that leads to wafer cracking. The storage layer acts as a mediator that manages the harmful byproducts while allowing the bonding process to proceed.
Principle concept:
If wafer bonding is performed during scaling down of semiconductor devices, then device integration density is improved, but wafer cracking occurs due to stress from water vapor and hydrogen byproducts
Why choose this principle:
The storage layer is formed with a porous structure that provides void spaces for storing the water vapor and hydrogen byproducts. The porous morphology allows the layer to accommodate the generated byproducts without generating significant stress, thereby preventing wafer cracking while maintaining the bonding process effectiveness.
Application Domain
Data Source
AI summary:
The use of storage layers, specifically carbon-containing porous materials, to store the water vapor and hydrogen byproducts generated during the bonding anneal, thereby reducing stress and preventing wafer cracking. These storage layers can include nitrogen as an etch stop layer and have a controlled carbon concentration to optimize porosity and density.
Abstract
The present disclosure describes a semiconductor structure having bonded wafers with storage layers and a method to bond wafers with storage layers. The semiconductor structure includes a first wafer including a first storage layer with carbon, a second wafer including a second storage layer with carbon, and a bonding layer interposed between the first and second wafers and in contact with the first and second storage layers.