Efficient Thin Silicon Layer Transfer for SOI Manufacturing
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Summary
Problems
Current methods for transferring thin silicon layers in semiconductor wafer manufacturing, such as back etch SOI and hydrogen implantation, are time-consuming, costly, and lack suitable thickness uniformity for layers thinner than a few microns, and existing bonding techniques result in weak van der Waal's forces that require high-temperature annealing.
Innovation solutions
A method involving the implantation of H2+ and He+ ions into a silicon dioxide layer of a donor substrate, followed by annealing to form a damage layer, bonding with a handle substrate, and cleaving at the damage layer to transfer silicon layers of specific thickness between 500 Angstroms and 2500 Angstroms, enabling the production of fully-depleted SOI structures with improved uniformity and reduced manufacturing costs.
TRIZ Analysis
Specific contradictions:
General conflict description:
Principle concept:
If back etch SOI method is used to transfer thin silicon layers, then layer transfer is achieved, but the process is time-consuming and costly
Why choose this principle:
The patent applies preliminary action by forming a damage layer through ion implantation before the bonding step. This pre-prepared damage layer serves as a predetermined cleavage plane that enables rapid layer transfer after bonding, eliminating the need for time-consuming back etching processes while maintaining precise thickness control.
Principle concept:
If back etch SOI method is used, then layer transfer is achieved, but substantial portion of donor wafer is wasted
Why choose this principle:
The patent implements discarding and recovering by enabling the donor substrate to be reused. The damage layer formation through ion implantation allows selective cleavage at the damage layer while preserving the bulk donor substrate, which can then be recovered and reused for additional layer transfers, dramatically reducing material waste compared to back etch methods.
Application Domain
Data Source
AI summary:
A method involving the implantation of H2+ and He+ ions into a silicon dioxide layer of a donor substrate, followed by annealing to form a damage layer, bonding with a handle substrate, and cleaving at the damage layer to transfer silicon layers of specific thickness between 500 Angstroms and 2500 Angstroms, enabling the production of fully-depleted SOI structures with improved uniformity and reduced manufacturing costs.
Abstract
A method for preparing semiconductor on insulator structures comprises transferring a thin layer of silicon from a donor substrate onto a handle substrate.