SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The substrate processing apparatus addresses uniformity issues by using a heated cover unit and adjustable gas supply to maintain consistent processing conditions, improving substrate uniformity and efficiency.
JP7763669B2Active Publication Date: 2025-11-04TOKYO ELECTRON LTD
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Patent Information
- Application Number
- JP2022001222
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2021-04-30
- Filing Date
- 2022-01-06
- Publication Date
- 2025-11-04
- Estimated Expiration
- 2042-01-06
AI Technical Summary
Technical Problem
Existing substrate processing technologies face challenges in achieving uniformity of processing across the substrate surface, leading to variations in etching rates and film formation.
Method used
A substrate processing apparatus with a cover unit that includes a heater and gas supply ports to heat and uniformly distribute processing gases, combined with a mechanism to adjust gas supply based on substrate rotation speed, ensuring uniform temperature and gas flow across the substrate.
Benefits of technology
Improves in-plane uniformity of substrate processing by stabilizing temperature and preventing etching variations, enhancing processing efficiency even with increased throughput.
✦ Generated by Eureka AI based on patent content.
Abstract
To provide a technology which improves in-plane uniformity of a substrate.SOLUTION: A substrate processing apparatus according to the embodiment includes a substrate holding part, a processing liquid supply part, and a cover part. The substrate holding part holds the substrate horizontally and rotates the substrate. The processing liquid supply part supplies processing liquid for one surface side of the substrate held by the substrate holding part. The cover part is provided so as to face the other surface of the substrate opposite to the one surface. The cover part is provided with a heater heating the substrate. In the cover part, an opening and a plurality of gas supply ports are formed. The opening is formed at a position corresponding to a central part of the substrate. The plurality of gas supply ports supply gas for the other surface of the substrate on an outer peripheral side of the opening. The gas is heated by the heater. At least a part of a supply amount of the gas is adjusted on the basis of rotation speed of the substrate.SELECTED DRAWING: Figure 2
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