Verfahren zur herstellung von polykristallinem silizium

AT1923691TUndetermined Publication Date: 2026-06-15TOKUYAMA CORP
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Patent Information

Application Number
AT2020839964T
Authority / Receiving Office
AT · AT
Patent Type
Patents
Current Assignee / Owner
Priority Date
2019-07-12
Filing Date
2020-06-05
Publication Date
2026-06-15
Estimated Expiration
2040-06-05

AI Technical Summary

Technical Problem

In the Siemens method for producing polycrystalline silicon, heat loss during the growth of silicon core wires leads to variations in the thickness of the polycrystalline silicon rods, with rods closer to the reactor wall growing at a lower rate due to identical electric current application, resulting in uneven thickness.

Method used

The method involves controlling electric currents through silicon core wires arranged in concentric circles, with higher currents applied to wires further from the center to compensate for heat loss, ensuring uniform growth rates and reducing thickness variations.

Benefits of technology

This approach results in polycrystalline silicon rods with reduced thickness variations, improving productivity and eliminating the need for non-routine handling and processing adjustments.

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Abstract

The present invention reduces a variation in thickness of polycrystalline silicon rods to be formed. A method for producing a polycrystalline silicon rod (13), the method involving growing polycrystalline silicon by passing electric currents through silicon core wires (7) in a bell jar (5) in which the silicon core wires (7) are arranged on a plurality of concentric circles, is configured such that values of the electric currents to be passed through the silicon core wires are controlled so that an electric current to be passed through a silicon core wire (7) arranged on a first concentric circle of the plurality of concentric circles has a greater value than an electric current to be passed through a silicon core wire (7) arranged on a second concentric circle of the plurality of concentric circles, the second concentric circle being located inward of the first concentric circle.
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