Method of forming a semiconductor structure

By forming a plurality of metal gate stacks above the shallow trench isolation material of the semiconductor substrate, and forming an interlayer dielectric layer and helmet structure above it, the contact problem between the metal gate stack and the shallow trench isolation material is solved, and a stable semiconductor structure and improved performance are achieved.

CN109817581BActive Publication Date: 2025-03-25TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
CN201811251062.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2018-08-28
Filing Date
2018-10-25
Publication Date
2025-03-25
Estimated Expiration
2040-02-28

AI Technical Summary

Technical Problem

When forming a semiconductor structure, it is difficult to effectively solve the contact problem between the metal gate stack and the shallow trench isolation material when the prior art forms a semiconductor structure, which affects the stability and performance of the structure.

Method used

By forming a plurality of metal gate stacks over the shallow trench isolation material of the semiconductor substrate, and forming an interlayer dielectric layer and helmet structure above it, the metal gate stack is etched until the shallow trench isolation material is reached to form a stable semiconductor structure.

Benefits of technology

The stable contact between the metal gate stack and the shallow trench isolation material is achieved, the stability and performance of the structure are improved, and the process window for cutting the metal gate is expanded.

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Abstract

A method for forming a semiconductor structure includes: forming a plurality of metal gate stacks above shallow trench isolation (STI) material in a semiconductor substrate; forming a gate spacer surrounding the metal gate stack; forming an interlayer dielectric layer above the shallow trench isolation material; recessing the interlayer dielectric layer and the gate spacer to a height below the top surface of the metal gate stack; forming a plurality of guard helmet structures above the recessed interlayer dielectric layer and the gate spacer; and after forming the guard helmet structures, etching the metal gate stack until the shallow trench isolation material is reached.
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