Sealing structure and manufacturing method thereof and display device

Abstract

A sealing structure and a manufacturing method thereof and a display device, the sealing structure comprising: a base substrate; a sealant located on the base substrate; and a contact layer located between the base substrate and the sealant and in contact with the sealant. In the sealing structure, a surface of the contact layer away from the base substrate is non-flat at a contact position with the sealant. The sealing structure has a good ability to block water vapor.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a sealing structure, a manufacturing method thereof, and a display device. Background Art

[0002] In the display field, the array substrate of the display panel is provided with a plurality of insulating layers and a plurality of conductive layers separated by the insulating layers. For example, the insulating layers include an inorganic insulating layer and an organic insulating layer, and the organic insulating layer can be made thicker than the inorganic insulating layer, so as to reduce the storage capacitance, load and power consumption. Summary of the invention

[0003] The embodiments of the present disclosure provide a sealing structure and a manufacturing method thereof and a display device, wherein the sealing structure has a good ability to block water vapor.

[0004] At least one embodiment of the present disclosure provides a sealing structure, which includes: a base substrate; a sealant located on the base substrate; and a contact layer located between the base substrate and the sealant and in contact with the sealant, wherein a surface of the contact layer away from the base substrate is non-flat at a contact position with the sealant.

[0005] For example, at least one contact layer groove is provided on the surface of the contact layer at a contact position with the sealant, and the sealant extends into the at least one contact layer groove.

[0006] For example, the at least one contact layer groove includes a first groove and a second groove, and the first groove and the second groove have different depths.

[0007] For example, the at least one contact layer groove includes a plurality of the first grooves and a plurality of the second grooves, and the plurality of the first grooves and the plurality of the second grooves are alternately arranged.

[0008] For example, the at least one contact layer groove comprises a closed annular groove.

[0009] For example, the sealing structure also includes: an organic layer located between the base substrate and the contact layer, wherein the surface of the organic layer away from the base substrate is non-flat at the position where the sealant is located, so that the surface of the contact layer is non-flat at the contact position.

[0010] For example, at least one organic layer groove is provided on the surface of the organic layer at the location of the sealant, and both the contact layer and the sealant extend into the at least one organic layer groove.

[0011] For example, the at least one organic layer groove includes at least one through hole and at least one blind hole, the depth of the through hole groove is equal to the thickness of the organic layer, and the depth of the blind hole groove is less than the thickness of the organic layer.

[0012] For example, the at least one organic layer groove includes a plurality of through-hole grooves, and a depth of each of the through-hole grooves is equal to a thickness of the organic layer.

[0013] For example, the sealing structure includes: a first inorganic layer, which is located on the base substrate; a second inorganic layer, which is located on a side of the first inorganic layer away from the base substrate. The orthographic projections of the first inorganic layer and the second inorganic layer on the base substrate overlap with the orthographic projections of the sealant on the base substrate; and the second inorganic layer serves as the contact layer, or the first inorganic layer and the second inorganic layer are located between the contact layer and the base substrate.

[0014] For example, for the same dry etching process, the dry etching rate of the first inorganic layer is lower than the dry etching rate of the second inorganic layer needles.

[0015] For example, the chemical compositions of materials of the first inorganic layer and the second inorganic layer are the same, and the refractive index of the first inorganic layer is greater than the refractive index of the second inorganic layer.

[0016] For example, the materials of the first inorganic layer and the second inorganic layer are both silicon dioxide, or both silicon nitride, or both silicon oxynitride.

[0017] For example, the sealant is a light-curing sealant.

[0018] At least one embodiment of the present disclosure provides a display device, which includes the sealing structure described in any one of the above embodiments.

[0019] At least one embodiment of the present disclosure provides a method for manufacturing a sealing structure, which includes: forming a contact layer on a substrate; and forming a sealant on the contact layer that contacts the contact layer, wherein a surface of the contact layer away from the substrate is non-flat at a contact position with the sealant.

[0020] For example, the manufacturing method also includes: forming an organic material layer on the base substrate; forming an organic layer by patterning the organic material layer, wherein the surface of the organic layer away from the base substrate is non-flat at the position where the sealant is located, so that the surface of the contact layer is non-flat at the contact position.

[0021] For example, the sealant is formed by light curing.

[0022] For example, a first inorganic material layer and a second inorganic material layer are sequentially formed on the substrate; the first inorganic material layer and the second inorganic material layer are patterned in the same mask process to form the first inorganic layer and the second inorganic layer respectively. The second inorganic layer serves as the contact layer; and for the dry etching process included in the same mask process, the dry etching rate of the first inorganic material layer is less than the dry etching rate of the second inorganic material layer.

[0023] For example, a first inorganic material layer, a second inorganic material layer, and a contact layer material layer are sequentially formed on the substrate; the first inorganic material layer, the second inorganic material layer, and the contact layer material layer are patterned in the same mask process to form the first inorganic layer, the second inorganic layer, and the contact layer, respectively. For the dry etching process included in the same mask process, the dry etching rates of the first inorganic material layer, the second inorganic material layer, and the contact layer material layer are sequentially increased.

[0024] At least one embodiment of the present disclosure provides a sealing structure, a manufacturing method thereof, and a display device. In the sealing structure, the film layer in contact with the sealant has a non-flat surface at the position in contact with the sealant, so that the position of the sealant in contact with the non-flat surface is also non-flat, which can extend the path of water vapor molecules from the interface between the sealant and the contact layer into the sealed area sealed by the sealing structure, thereby facilitating the improvement of the water vapor barrier capability of the sealing structure and improving the high temperature and high humidity reliability of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, but are not intended to limit the present disclosure.

[0026] Figure 1A is a partial cross-sectional schematic diagram 1 of a sealing structure according to at least one embodiment of the present disclosure;

[0027] Figure 1B for Figure 1A A partial schematic diagram of the sealing structure shown;

[0028] Figure 1C for Figure 1A A schematic top view of a portion of the sealing structure shown;

[0029] Figure 2A FIG2 is a second partial cross-sectional schematic diagram of a sealing structure according to at least one embodiment of the present disclosure;

[0030] Figure 2B for Figure 2A A partial schematic diagram of the sealing structure shown;

[0031] Figure 2C for Figure 2A Schematic diagram of the sealing structure shown to block water vapor;

[0032] Figure 2D is a cross-sectional schematic diagram of a sealing structure including two through-hole grooves according to at least one embodiment of the present disclosure;

[0033] Figure 2E for Figure 2D A schematic top view of two through-hole grooves shown;

[0034] Figure 3 A partial cross-sectional view of a sealing structure according to at least one embodiment of the present disclosure Figure 3 ;

[0035] Figure 4 A schematic diagram of a sealing structure according to at least one embodiment of the present disclosure including a plurality of inorganic layers provided with vias;

[0036] Figure 5 is a transmittance curve when a plurality of inorganic layers included in the sealing structure according to at least one embodiment of the present disclosure have different refractive indices;

[0037] Figure 6 A partial cross-sectional view of a sealing structure according to at least one embodiment of the present disclosure Figure 4 ;

[0038] Figure 7 A schematic diagram of forming an organic material layer on a base substrate in a method for manufacturing a sealing structure according to at least one embodiment of the present disclosure;

[0039] Fig. 8A and Figure 8B A schematic diagram of manufacturing a first inorganic layer, a second inorganic layer and a contact layer in a method for manufacturing a sealing structure according to at least one embodiment of the present disclosure;

[0040] Fig. 9 The present invention is a schematic diagram of forming a first inorganic material layer and a second inorganic material layer on a base substrate in a method for manufacturing a sealing structure according to at least one embodiment of the present disclosure. DETAILED DESCRIPTION

[0041] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0042] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0043] In the display panel, due to the provision of an organic insulating layer, the paths for water vapor to enter the interior of the panel are increased, which reduces the reliability of the high temperature and high humidity test of the display panel.

[0044] At least one embodiment of the present disclosure provides a sealing structure, a manufacturing method thereof, and a display device. In the sealing structure, a film layer in contact with a sealant (hereinafter referred to as a "contact layer") has a non-flat surface at a position in contact with the sealant, so that the position of the sealant in contact with the non-flat surface is also non-flat, which can extend the path of water vapor molecules from the interface between the sealant and the contact layer into the sealed area sealed by the sealing structure, thereby facilitating the improvement of the water vapor barrier capability of the sealing structure and improving the high temperature and high humidity reliability of the product.

[0045] The sealing structure and the manufacturing method thereof and the display device provided by the embodiments of the present disclosure are described in detail below in conjunction with the accompanying drawings.

[0046] At least one embodiment of the present disclosure provides a sealing structure, such as Figure 1A and Figure 1B As shown, the sealing structure includes a base substrate 100A and a sealant 300 located on the base substrate 100A, and the sealing structure also includes a contact layer 50 located between the base substrate 100A and the sealant 300 and in contact with the sealant 300. The contact layer surface 50A of the contact layer 50 away from the base substrate 100A (the upper surface of the contact layer 50 as shown in the figure) is non-flat at the contact position with the sealant 300, so that the sealant 300 is also non-flat at the contact position. It should be noted that Figure 1A and Figure 1B Only some components of the sealing structure are shown. For example, a conductive layer, a semiconductor layer or an insulating layer, etc., which are not shown in the figure, are provided between the contact layer 50 and the base substrate 100A.

[0047] For example, the base substrate 100A is a transparent substrate such as a glass substrate, a quartz substrate or a plastic substrate.

[0048] For example, the sealant 300 is an organic sealant, such as a light-curing sealant (eg, UV-curing sealant) or a heat-curing sealant.

[0049] For example, the contact layer 50 is a transparent material layer such as an inorganic layer or an organic layer. For example, the inorganic layer is an inorganic insulating layer, and the organic layer is an organic insulating layer.

[0050] For example, Figure 1A and Figure 1B As shown, the sealing structure includes a first substrate 100 and a second substrate 200 arranged opposite to each other, a sealant 300 connects the first substrate 100 and the second substrate 200, and the first substrate 100 includes a base substrate 100A. For example, the sealing structure is a liquid crystal panel. In this case, the sealing cavity formed by the first substrate 100, the second substrate 200 and the sealing structure 300 is filled with liquid crystal material to form a liquid crystal box, and a spacer PS is provided between the first substrate 100 and the second substrate 200 to maintain the cell thickness of the liquid crystal. It should be noted that embodiments of the sealing structure include but are not limited to liquid crystal panels.

[0051] For example, the first substrate 100 is an array substrate, which is provided with array-arranged switch elements (such as transistors) and pixel electrodes electrically connected to the switch elements, and the first substrate 100 further includes an electrode layer 70 and an alignment layer 60 covering the electrode layer 70. For example, the alignment layer 60 does not overlap with the sealant 300. For example, the electrode layer 70 is a pixel electrode layer including pixel electrodes or the electrode layer 70 includes strip pixel electrodes and strip common electrodes alternately arranged; in other embodiments, the first substrate 100 further includes another electrode layer stacked with the electrode layer 70, one of the other electrode layer and the electrode layer 70 is a pixel electrode layer including pixel electrodes and the other is a common electrode layer including common electrodes.

[0052] For example, the second substrate 200 includes a base substrate (such as a transparent substrate such as a glass substrate, a quartz substrate or a plastic substrate), a black matrix BM located on the base substrate, and a cover layer OC located between the black matrix BM and the sealant 300. For example, the second substrate 200 is a color filter substrate including a color filter layer.

[0053] For example, in order to transfer the shape of the non-flat portion of the contact layer surface 50A of the contact layer 50 to the sealant 300 through contact with the sealant 300, the following method can be adopted: the contact layer surface 50A of the contact layer 50 away from the base substrate 100A is provided with at least one contact layer groove at the contact position where it contacts the sealant 300, and the sealant 300 extends into the at least one contact layer groove.

[0054] For example, at least one contact layer groove formed on the contact layer surface 50A of the contact layer 50 includes grooves of different depths. Figure 1A and Figure 1B As shown, at least one contact layer groove formed on the contact layer surface 50A of the contact layer 50 includes a first groove 51 and a second groove 52, and the depths of the first groove 51 and the second groove 52 are different. In the case where the contact layer 50 is made of an organic insulating layer, the organic material at the bottom of the groove with a smaller depth in the first groove 51 and the second groove 52 can absorb some water molecules, thereby further reducing the water molecules entering the sealed area; similarly, in the case where the contact layer 50 is made of an inorganic insulating layer and the contact layer 50 covers the organic insulating layer, the organic material at the bottom of the groove with a smaller depth in the first groove 51 and the second groove 52 can absorb some water molecules, thereby further reducing the water molecules entering the sealed area.

[0055] In other embodiments, for example, the depths of the at least one contact layer groove formed on the contact layer surface 50A of the contact layer 50 are all the same.

[0056] For example, in order to further improve the water vapor barrier capability of the sealing structure, e.g. Figure 1A and Figure 1B As shown, at least one contact layer groove formed on the contact layer surface 50A of the contact layer 50 includes a plurality of first grooves 51 and a plurality of second grooves 52, and the plurality of first grooves 51 and the plurality of second grooves 52 are arranged alternately, that is, a second groove 52 is arranged between at least two adjacent first grooves 51 and / or a first groove 51 is arranged between at least two adjacent second grooves 52. For example, the plurality of first grooves 51 and the plurality of second grooves 52 are arranged alternately and cyclically, that is, a second groove 52 is arranged between any two adjacent first grooves 51 and a first groove 51 is arranged between any two adjacent second grooves 52.

[0057] For example, in order to further improve the water vapor barrier capability of the sealing structure, e.g. Figure 1C As shown, at least one contact layer groove formed on the contact layer surface 50A of the contact layer 50 comprises a closed annular groove (see Figure 1C For example, the at least one contact layer groove includes a plurality of closed annular grooves, for example, the first groove 51 and the second groove 52 are both closed annular grooves. It should be noted that, Figure 1C The area surrounded by the two dotted lines in the figure is the area where the sealant 300 is located, and the area surrounded by the area where the sealant is located is the sealed area. For example, the above-mentioned spacer PS, the alignment layer 60 and the electrode layer 70 are arranged in the sealed area.

[0058] For example, a non-planar organic layer may be formed on the base substrate 100A and then a contact layer 50 covering the organic layer may be formed (e.g., the contact layer 50 covers and directly contacts the organic layer), so that the contact layer surface 50A of the contact layer 50 is non-planar at the contact position with the sealant 300. In this case, for example, Figure 2A and Figure 2B As shown, the sealing structure provided by at least one embodiment of the present disclosure also includes an organic layer 14 located between the base substrate 100A and the contact layer 50, and an organic layer surface 14A of the organic layer 14 away from the base substrate 100A (see the upper surface of the organic layer 14 in the figure) is non-flat at the position where the sealant 300 is located, that is, the organic layer surface 14A of the organic layer 14 is provided with a non-flat portion overlapping with the sealant 300, so that the contact layer surface 50A of the contact layer 50 is non-flat at the contact position.

[0059] It should be noted that Figure 2A and Figure 2B Only some components of the sealing structure are shown. For example, a conductive layer, a semiconductor layer or an insulating layer not shown in the figure is also provided between the organic layer 14 and the base substrate 100A. Figure 2A and Figure 2B The contact layer 50 and the sealant 300 in the embodiment can be set as shown in FIG. Figure 1A and Figure 1B The related descriptions in the illustrated embodiments will not be repeated any more.

[0060] In the embodiment of the present disclosure, although the contact layer 50 has a non-flat portion overlapping with the sealant 300, since the non-flat organic layer 14 is formed first and then the contact layer directly in contact with the organic layer 14 is formed, it is not necessary to change the mask for forming the contact layer 50 in order to form the non-flat portion of the contact layer 50. It is only necessary to prevent the formed contact layer 50 from filling the non-flat portion of the organic layer 14. In this case, for example, Figure 2A and Figure 2B As shown, the contact layer 50 is non-planar and continuous at the non-planar portions of the organic layer 14 .

[0061] For example, at least one organic layer groove is provided on the organic layer surface 14A of the organic layer 14 away from the base substrate 100A at the position where the sealant 300 is located, the contact layer 50 extends into the at least one organic layer groove, and the sealant 300 also extends into the at least one organic layer groove. In the embodiment of the present disclosure, the organic layer 14 can be made thicker, so that the organic layer groove in the organic layer 14 can have a greater depth, so that the portion of the sealant 300 extending into the organic layer groove has a greater length, which is further conducive to extending the path for water molecules to enter the sealed area (the entry path of water molecules can be seen in Figure 2C) to further improve the ability of the sealing structure to block water vapor.

[0062] In order to avoid the opening width of the organic layer groove being too large and thus causing a significant impact on the ability of the sealing structure to block water vapor, for example, the opening width of the at least one organic layer groove in the organic layer 14 is less than or equal to 10 microns, that is, the size of the orthographic projection of each organic layer groove on the base substrate 100A is less than or equal to 10 microns. Considering the accuracy of the mask used to make the organic layer 14, for example, the opening width of each organic layer groove is greater than or equal to 6 microns and less than or equal to 10 microns.

[0063] For example, Figure 2A and Figure 2B As shown, at least one organic layer groove disposed on the organic layer surface 14A of the organic layer 14 at the location of the sealant 300 includes at least one through hole groove 141 and at least one blind hole groove 142, the depth of the through hole groove 141 is equal to the thickness of the organic layer 14 so that the through hole groove 141 penetrates the organic layer 14, and the depth of the blind hole groove 141 is less than the thickness of the organic layer 14. The material of the organic layer 14 at the blind hole groove 142 can absorb part of the water molecules, thereby further reducing the water molecules entering the sealed area.

[0064] For example, Figure 2D As shown, the organic layer groove includes a plurality of through-hole grooves 141 ( Figure 2D Taking two through-hole grooves as an example), the depth of each through-hole groove 141 is equal to the thickness of the organic layer 14. Figure 2E As shown, each through hole groove 141 is a closed annular groove.

[0065] For example, in any embodiment of the present disclosure, the organic layer 14 can be made of resin or a similar transparent insulating organic material to obtain a greater thickness.

[0066] For example, Figure 3 As shown, at least one embodiment of the present disclosure provides a sealing structure including a first inorganic layer 11 located on a base substrate 100A and a second inorganic layer 12 located on a side of the first inorganic layer 11 away from the base substrate 100A, wherein the orthographic projections of the first inorganic layer 11 and the second inorganic layer 12 on the base substrate 100A overlap with the orthographic projections of the sealant 300 on the base substrate 100A and are located between the contact layer 50 and the base substrate 100A. It should be noted that Figure 3 The arrangement of the contact layer 50 and the sealant 300 in the embodiment shown in FIG. Figure 1A and Figure 1B The relevant description of the embodiment shown, and Figure 3 The arrangement of the organic layer 14 in the embodiment shown can be referred to Figure 2A and Figure 2B The related descriptions in the illustrated embodiments will not be repeated any more.

[0067] For example, the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 are all inorganic insulating layers. Figure 3 As shown, a first metal layer 81, a semiconductor layer 90, a second metal layer 82 and an electrode layer 70 are sequentially arranged between the organic layer 14 and the base substrate 100A, the first inorganic layer 11 is located between the first metal layer 81 and the semiconductor layer 90, the second inorganic layer 12 is located between the semiconductor layer 90 and the second metal layer 82, and the organic layer 14 and the contact layer 50 are located between the second metal layer 82 and the electrode layer 70.

[0068] For example, the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 can be formed by the same mask process (i.e., a process of patterning using the same mask plate). Figure 4 The via hole 125 shown penetrates the first inorganic layer 11 , the second inorganic layer 12 and the contact layer 50 . The via hole 125 is used to realize electrical connection between the conductive structure included in the electrode layer 70 and the conductive structure included in the first metal layer 81 .

[0069] For example, for the same dry etching process (i.e., the dry etching steps included in the same mask process), the dry etching rates of the first inorganic layer 11, the second inorganic layer 12, and the contact layer 50 increase in sequence (i.e., the closer to the substrate 100A, the smaller the dry etching rate), that is, the layer farther away from the substrate 100A is easier to be etched. This is conducive to making the via 125 that simultaneously penetrates the first inorganic layer 11, the second inorganic layer 12, and the contact layer 50 have a better morphology, that is, the opening size of the via 125 gradually increases in the direction away from the substrate, thereby ensuring the electrical connection between different conductive structures at the via 125.

[0070] In the study, the inventor of the present application found that when the materials of the multiple inorganic layers included in the sealing structure adopt the same chemical composition, the greater the refractive index of the inorganic layer, the smaller the dry etching rate of the inorganic layer. Based on this discovery, the inventor of the present application noticed that by making the chemical composition of the materials of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 the same and making the refractive index of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 decrease in sequence (that is, the closer to the base substrate 100A, the greater the refractive index), a better dry etching effect and a larger transmittance can be obtained at the same time, that is, the laminated structure of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 can form a via 125 with a better morphology after dry etching, and the laminated structure can have a larger transmittance, so as to obtain a better curing effect when the sealant 300 is a light-curing sealant, so as to improve the anti-peeling ability of the sealant 300.

[0071] For example, the materials of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 are at least one of silicon dioxide, silicon nitride and silicon oxynitride. For example, the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 are all silicon dioxide films, or are all silicon nitride films or are all silicon oxynitride films, and the refractive indexes of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 decrease in sequence. In this case, for ultraviolet light in the wavelength range of 335nm-385nm or ultraviolet light in the wavelength range of 275nm-300nm, the transmittances of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 increase in sequence. For example, Figure 5 As shown, the refractive indices (RI) of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 are 1.95, 1.9 and 1.85 respectively, and the transmittance to ultraviolet light in the wavelength range of 335nm-385nm or ultraviolet light in the wavelength range of 275nm-300nm increases successively with the increase of the refractive index.

[0072] For the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50, in other embodiments, for example, the chemical composition of the materials of the first inorganic layer 11 and the second inorganic layer 12 may be the same and the refractive index of the first inorganic layer 11 may be greater than the refractive index of the second inorganic layer 12, or one of the first inorganic layer 11 and the second inorganic layer 12 may have the same chemical composition as the material of the contact layer 50 and the refractive index of one of the first inorganic layer 11 and the second inorganic layer 12 may be greater than the refractive index of the second inorganic layer 12.

[0073] In other embodiments, for example, Figure 6As shown, the sealing structure provided by at least one embodiment of the present disclosure includes a first inorganic layer 21 covering the substrate 100A and a second inorganic layer 22 covering the first inorganic layer 21 , wherein both the first inorganic layer 21 and the second inorganic layer 22 overlap with the sealant 300 and the second inorganic layer 12 serves as a contact layer 50 .

[0074] It should be noted that Figure 6 Only some parts of the sealing structure are shown. For example, a conductive layer, a semiconductor layer or an insulating layer not shown in the figure is also provided between the first inorganic layer 21 and the base substrate 100A. Figure 6 The arrangement of the contact layer 50 and the sealant 300 in the embodiment shown in FIG. Figure 1A and Figure 1B The relevant description of the embodiment shown, and Figure 6 The arrangement of the organic layer 14 in the embodiment shown can be referred to Figure 2A and Figure 2B The related descriptions in the illustrated embodiments will not be repeated any more.

[0075] For example, for the same dry etching process, the dry etching rate of the first inorganic layer 21 is lower than the dry etching rate of the second inorganic layer 22. This is conducive to making the via hole that penetrates the first inorganic layer 21 and the second inorganic layer 22 have a better morphology, thereby ensuring the electrical connection between different conductive structures at the via hole.

[0076] For example, the chemical composition of the materials of the first inorganic layer 21 and the second inorganic layer 22 is the same and the refractive index of the first inorganic layer 21 is greater than the refractive index of the second inorganic layer 22. This is beneficial for the stacked structure of the first inorganic layer 21 and the second inorganic layer 22 to form a via with a better morphology after dry etching, and can also make the stacked structure have a greater transmittance.

[0077] For example, the first inorganic layer 21 and the second inorganic layer 22 are both silicon dioxide films, or both are silicon nitride films, or both are silicon oxynitride films, and the refractive index of the first inorganic layer 21 is greater than the refractive index of the second inorganic layer 22. In this case, for ultraviolet light in the wavelength range of 335nm-385nm or ultraviolet light in the wavelength range of 275nm-300nm, the transmittance of the first inorganic layer 21 is less than the transmittance of the second inorganic layer 22, so that the stacked structure of the first inorganic layer 21 and the second inorganic layer 22 has a larger transmittance.

[0078] At least one embodiment of the present disclosure further provides a display device, which includes the sealing structure in any one of the above embodiments.

[0079] For example, the display device provided in the embodiments of the present disclosure may be a liquid crystal panel, electronic paper, an OLED (Organic Light-Emitting Diode) panel, a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or any other product or component with a display function.

[0080] At least one embodiment of the present disclosure further provides a method for manufacturing a sealing structure. Figure 1A , Figure 2A , Figure 3 and Figure 6 Taking the sealing structure shown as an example, the method includes: forming a contact layer 50 on the base substrate 100A; and forming a sealant 300 on the contact layer 50 to contact the contact layer 50, so that the contact layer surface 50A of the contact layer 50 away from the base substrate 100A is uneven at the contact position with the sealant 300.

[0081] For example, the sealant 300 is formed by curing. For example, the sealant 300 is formed by light curing (such as ultraviolet light curing), for example, the wet glue used to form the sealant 300 is irradiated from the side where the base substrate 100 is located to cure the wet glue, thereby obtaining the sealant 300. For example, the sealant 300 can also be made by heat curing.

[0082] It should be noted that if Figure 1A , Figure 2A , Figure 3 and Figure 6 As shown, the sealing structure includes a first substrate 100 and a second substrate 200 relative to each other. In the manufacturing method provided in the embodiment of the present disclosure, wet glue can be first applied on the first substrate 100, and then the wet glue is connected to the second substrate 200, and then the wet glue is cured to obtain the sealant 300; or, wet glue can be first applied on the second substrate 200, and then the wet glue is connected to the first substrate 100, and then the wet glue is cured to obtain the sealant 300.

[0083] For example, at least one embodiment of the present disclosure provides a manufacturing method further comprising: Figure 7 As shown, an organic material layer 140 is formed on the base substrate 100A; the organic material layer 140 is patterned to form a Figure 2A , Figure 3 and Figure 6 In the organic layer 14 shown, the organic layer surface 14A of the organic layer 14 away from the base substrate 100A is non-planar at the location of the sealant 300, so that the contact layer surface 50A of the contact layer 50 is non-planar at the contact location.

[0084] For example, the patterning process for forming the organic layer 14 includes the steps of exposing the organic material layer 140 using a mask plate and developing the exposed material. In this case, the organic layer 14 is made of photoresist. For example, the organic layer 14 uses negative photoresist to obtain better ability to block water vapor; or, the patterning process for forming the organic layer 14 includes the steps of coating photoresist, exposing the photoresist using a mask plate, developing the exposed photoresist to form a photoresist pattern, and etching using the photoresist pattern.

[0085] For example, for Figure 3 The sealing structure shown in FIG. 1 , at least one embodiment of the present disclosure provides a manufacturing method comprising: Fig. 8A As shown, a first inorganic material layer 110, a second inorganic material layer 120 and a contact layer material layer 500 are sequentially formed on a base substrate 100A. For example, after forming the first inorganic material layer 110 and the second inorganic material layer 120, a patterned organic layer 14 is formed, and then a contact material layer 500 is formed on the organic layer 14; the first inorganic material layer 110, the second inorganic material layer 120 and the contact layer material layer 500 are patterned in the same mask process to form a first inorganic layer 11, a second inorganic layer 12 and a contact layer 50, respectively, as shown in FIG. Figure 8B As shown, for the dry etching process included in the same mask process, the dry etching rates of the first inorganic material layer 110, the second inorganic material layer 120 and the contact layer material layer 500 are increased in sequence. This is conducive to making the via hole 125 that simultaneously penetrates the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 have a better morphology, that is, the opening size of the via hole 125 gradually increases in the direction away from the substrate, thereby ensuring the electrical connection between different conductive structures at the via hole 125.

[0086] For example, the mask process includes the steps of coating photoresist, exposing the photoresist using a mask, developing the exposed photoresist to form a photoresist pattern, and performing dry etching using the photoresist pattern.

[0087] For example, the chemical composition of the materials of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 is the same and the refractive indices of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 decrease successively. This is beneficial for the stacked structure of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 to form a via 125 with a better morphology after dry etching, and can also make the stacked structure have a larger transmittance, so that the sealant 300 formed by photocuring has a better curing effect, thereby improving the anti-peeling ability of the sealant 300.

[0088] For example, the materials of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 are at least one of silicon dioxide, silicon nitride and silicon oxynitride. For example, the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 are all silicon dioxide films, or are all silicon nitride films or are all silicon oxynitride films, and the refractive indexes of the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 decrease in sequence. In this case, in the manufacturing method provided by at least one embodiment of the present disclosure, forming the sealant 300 includes: using ultraviolet light with a wavelength range of 335nm-385nm or ultraviolet light with a wavelength range of 275nm-300nm to irradiate the wet glue used to form the sealant 300 from one side of the base substrate 100A to obtain a cured sealant 300.

[0089] For example, the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 are all made by chemical vapor deposition (Chemical Vapor Deposition) or plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition) or other methods. Taking the first inorganic layer 11, the second inorganic layer 12 and the contact layer 50 as an example of silicon nitride films, for example, multiple silicon nitride films with the same chemical composition but different refractive indices can be formed by adjusting parameters such as RF power, pressure in the film forming chamber, and concentrations of reaction gases silane (SiH4) and ammonia (NH3).

[0090] For example, for Figure 6 The sealing structure shown in FIG. 1 , at least one embodiment of the present disclosure provides a manufacturing method comprising: Fig. 9 As shown, a first inorganic material layer 210 and a second inorganic material layer 220 are sequentially formed between the base substrate 100A and the sealant 300; the first inorganic material layer 210 and the second inorganic material layer 220 are patterned in the same mask process to form the following respectively: Figure 6 The first inorganic layer 21 and the second inorganic layer 22 are shown, and the second inorganic layer 22 serves as a contact layer 50 ; for the dry etching process included in the same mask process, the dry etching rate of the first inorganic material layer 210 is lower than the dry etching rate of the second inorganic material layer 220 .

[0091] For example, the first inorganic layer 21 and the second inorganic layer 22 are both silicon dioxide films, or both are silicon nitride films, or both are silicon oxynitride films, and the refractive indices of the first inorganic layer 21 and the second inorganic layer 22 decrease successively. In this case, in the manufacturing method provided in at least one embodiment of the present disclosure, forming the sealant 300 includes: using ultraviolet light with a wavelength range of 335nm-385nm or ultraviolet light with a wavelength range of 275nm-300nm to irradiate the wet glue used to form the sealant 300 from one side of the base substrate 100A to obtain a cured sealant 300.

[0092] For example, the first inorganic layer 21 and the second inorganic layer 22 are both made by chemical vapor deposition or plasma enhanced chemical vapor deposition or other methods. For example, multiple thin films with the same chemical composition but different refractive indices can be formed by adjusting parameters such as RF power, pressure in the film forming chamber, and concentration of the reaction gas.

[0093] The arrangement of the components in the manufacturing method provided in the embodiment of the present disclosure may refer to the relevant description in the embodiment of the sealing structure, and the repeated parts will not be repeated.

[0094] In summary, the embodiments of the present disclosure provide a sealing structure, a manufacturing method thereof, and a display device. Since the film layer in contact with the sealant has a non-flat surface at the position in contact with the sealant, the position where the sealant contacts the non-flat surface is also non-flat. This can extend the path for water vapor molecules to enter the sealed area sealed by the sealed structure from the interface between the sealant and the contact layer, which is beneficial to improving the water vapor blocking ability of the sealing structure. In some embodiments, when the sealant is formed by photocuring, by making the chemical composition of the materials of the multiple inorganic layers located between the sealant and the base substrate the same and the refractive index decreasing successively, the transmittance of the light used to cure the sealant can be improved, thereby improving the curing effect and anti-peeling ability of the sealant.

[0095] The following points need to be explained: (1) The drawings of the embodiments of the present disclosure only involve structures related to the embodiments of the present disclosure, and other structures can refer to the general design; (2) The embodiments of the present disclosure and the features therein can be combined with each other without conflict.

[0096] The above description is merely an exemplary embodiment of the present disclosure and is not intended to limit the protection scope of the present disclosure. The protection scope of the present disclosure is determined by the appended claims.

Claims

1. A sealing structure, comprising: substrate substrate; a sealant on the substrate; as well as a contact layer located between the base substrate and the sealant and in contact with the sealant, wherein a surface of the contact layer away from the base substrate is non-flat at a contact position with the sealant, and at least one contact layer groove is provided on the surface of the contact layer at the contact position with the sealant, and the sealant extends into the at least one contact layer groove, The sealing structure includes a first inorganic layer and a second inorganic layer, the first inorganic layer is located on the base substrate, the second inorganic layer is located on a side of the first inorganic layer away from the base substrate, the orthographic projections of the first inorganic layer and the second inorganic layer on the base substrate overlap with the orthographic projections of the sealant on the base substrate, and the first inorganic layer and the second inorganic layer are located between the contact layer and the base substrate. The chemical compositions of the materials of the first inorganic layer, the second inorganic layer and the contact layer are the same, and the refractive indices of the first inorganic layer, the second inorganic layer and the contact layer decrease in sequence, and the sealant is a photocurable sealant.

2. The sealing structure according to claim 1, wherein: The at least one contact layer groove includes a first groove and a second groove, and the first groove and the second groove have different depths.

3. The sealing structure according to claim 2, wherein: The at least one contact layer groove includes a plurality of the first grooves and a plurality of the second grooves, and the plurality of the first grooves and the plurality of the second grooves are alternately arranged.

4. The sealing structure according to claim 1, wherein: The at least one contact layer groove comprises a closed annular groove.

5. The sealing structure according to any one of claims 1 to 4, further comprising: An organic layer is located between the base substrate and the contact layer, wherein a surface of the organic layer away from the base substrate is non-planar at the location of the sealant, so that the surface of the contact layer is non-planar at the contact location.

6. The sealing structure according to claim 5, wherein: At least one organic layer groove is arranged on the surface of the organic layer at the position where the sealant is located, and both the contact layer and the sealant extend into the at least one organic layer groove.

7. The sealing structure according to claim 6, wherein: The at least one organic layer groove includes at least one through hole groove and at least one blind hole groove, the depth of the through hole groove is equal to the thickness of the organic layer, and the depth of the blind hole groove is less than the thickness of the organic layer.

8. The sealing structure according to claim 6, wherein: The at least one organic layer groove includes a plurality of through-hole grooves, and a depth of each of the through-hole grooves is equal to a thickness of the organic layer.

9. The sealing structure according to claim 1, wherein: For the same dry etching process, the dry etching rate of the first inorganic layer is lower than the dry etching rate of the second inorganic layer.

10. The sealing structure according to claim 1, wherein: The material of the first inorganic layer and the second inorganic layer is at least one of silicon dioxide, silicon nitride and silicon oxynitride.

11. The sealing structure according to claim 1, wherein: The first inorganic layer, the second inorganic layer and the contact layer are all made of silicon dioxide.

12. The sealing structure according to claim 6, wherein: The opening width of the organic layer groove is less than or equal to 10 micrometers.

13. A display device comprising the sealing structure according to any one of claims 1 to 12.

14. A method for manufacturing a sealing structure, comprising: forming a contact layer on the substrate; forming a sealant in contact with the contact layer on the contact layer by means of photocuring, wherein a surface of the contact layer away from the substrate is non-planar at a contact position with the sealant, and at least one contact layer groove is provided on the surface of the contact layer at the contact position with the sealant, and the sealant extends into the at least one contact layer groove; forming a first inorganic material layer, a second inorganic material layer and a contact layer material layer in sequence on the base substrate; and The first inorganic material layer, the second inorganic material layer and the contact layer material layer are patterned in the same mask process to form a first inorganic layer, a second inorganic layer and the contact layer, respectively, wherein in the dry etching process included in the same mask process, the dry etching rates of the first inorganic material layer, the second inorganic material layer and the contact layer material layer are increased in sequence, The chemical compositions of materials of the first inorganic layer, the second inorganic layer, and the contact layer are the same, and the refractive indexes of the first inorganic layer, the second inorganic layer, and the contact layer decrease in sequence.

15. The manufacturing method according to claim 14, further comprising: forming an organic material layer on the base substrate; An organic layer is formed by patterning the organic material layer, wherein a surface of the organic layer away from the base substrate is non-planar at the location of the sealant, so that a surface of the contact layer is non-planar at the contact location.

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