Chemical Vapor Deposition Reactor

By designing a chemical vapor deposition reaction chamber including an upper heating module, a substrate bearing device, a lifting cylinder and exhaust gas collection ring, a nozzle and a stop unit, the problems of dust dissipation, heating and uneven contact of the reaction gas are solved, and automated production with high yield and high productivity is achieved.

CN112176324BActive Publication Date: 2025-03-25SU ZHOU TRUSTEC MECHATRONICS CO LTD
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Patent Information

Application Number
CN202011165028.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-07-06
Filing Date
2020-10-27
Publication Date
2025-03-25
Estimated Expiration
2040-10-27

AI Technical Summary

Technical Problem

During the chemical vapor deposition process, the drift of dust will lead to a decrease in yield. The heating temperature of the substrate and the contact between the reaction gas will affect the film quality, and the efficiency of automated production is limited by the substrate positioning and removal method.

Method used

A chemical vapor deposition reaction chamber is designed, including an upper heating module, a substrate bearing device, a lifting cylinder and exhaust gas collection ring, a nozzle and a stop unit. Through air float technology, the uniform heating of the substrate and the uniform contact of the reaction gas are achieved, and automated production is supported.

Benefits of technology

It improves the product yield of the substrate, is suitable for automated production, improves production capacity, and ensures the quality of the film through uniform heating and reaction gas contact.

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Abstract

The chemical vapor deposition reaction chamber provided by the present invention is a face-down reaction chamber, which enables the substrate (wafer) to contact the reaction gas with the reaction surface facing downward, so that the dust settles downward due to gravity and is not easily attached to the reaction surface of the substrate, thereby improving the yield loss problem caused by dust dispersion. Secondly, in order to achieve high production capacity, the present invention sets a substrate carrying device that is convenient for automated production operations in the chemical vapor deposition reaction chamber, so that the placement and collection of the substrate are more convenient, thereby achieving the effect of high production capacity. Furthermore, the substrate carrying device can also introduce flotation gas to suspend and rotate the substrate, so that the heating effect of the substrate is more uniform and precise, thereby improving the problem of more uneven film forming effect of the substrate.
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