Device and method for single-side etching of a semiconductor layer of a workpiece

By using the negative pressure holding element and the second electrode structure in the dry contact in the single-side etching technology, the problem of difficult etching quality is solved, and a one-side etching effect with high quality and uniformity is achieved.

CN112335026BActive Publication Date: 2025-03-28NEXWAFE GMBH
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Patent Information

Application Number
CN201980033126.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2018-05-17
Filing Date
2019-05-06
Publication Date
2025-03-28
Estimated Expiration
2039-05-06

AI Technical Summary

Technical Problem

When the existing one-sided etching technology is used in industrial manufacturing, the etching quality is difficult to ensure, especially in terms of uniformity of the semiconductor layer and uniformity of the etching process.

Method used

The negative pressure holding element and the second electrode structure in the dry contact are adopted, and the workpiece is held on the etching side through the negative pressure holding element, and uniform electrical contact is achieved through the dry contact second electrode, thereby avoiding the leakage problem of the wet chemical contact structure.

Benefits of technology

High-quality unilateral electrochemical etching in online operation is achieved, ensuring good uniformity on the etching side and reducing the inhomogeneity of the etching process.

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Abstract

The present invention relates to a device for etching one side of a semiconductor layer of a workpiece, the device comprising: at least one etching pool for containing an electrolyte; a first electrode provided for electrically contacting the electrolyte in the etching pool during use; at least one second electrode provided for indirectly or directly electrically contacting the semiconductor layer; at least one electric power source for conductively connecting the first and second electrodes to generate an etching current; and at least one conveying device for conveying the workpiece relative to the etching pool so that the etching side of the semiconductor layer to be etched during use can be wetted by the electrolyte in the etching pool. The present invention is characterized in that the conveying device has a negative pressure holding element for the workpiece, the negative pressure holding element is configured to arrange the workpiece on a holding side opposite to the etching side by negative pressure, and a second electrode is arranged on the negative pressure holding element so that the holding side of the workpiece is contacted by the second electrode when the workpiece is arranged on the negative pressure holding element. The present invention also relates to a method for etching one side of a semiconductor layer of a workpiece.
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