Afferent neuron circuit and mechanoreceptive system

Abstract

The present invention belongs to the field of brain-like bionic technology and discloses an afferent neuron circuit, comprising: a resistor Rc and a volatile threshold transition device TS; the volatile threshold transition device TS has a parasitic capacitor C Parasitic The first end of the resistor Rc is used as a signal input end, and the second end of the resistor Rc is used as a signal output end; the first end of the volatile threshold conversion device TS is connected to the signal output end, and the second end of the volatile threshold conversion device TS is grounded. The afferent neuron circuit provided by the present invention has a simple structure, good shrinkability, and is suitable for large-scale integration.

Description

Technical Field

[0001] The present invention relates to the field of brain-like bionic technology, and in particular to an afferent neuron circuit and a mechanical perception system. Background Art

[0002] Artificial afferent neurons are components that convert external analog signals into system pulse signals, and have important applications in building spiking neural network systems. Currently, afferent neuron circuits are mainly based on CMOS circuits, which have complex structures and poor miniaturization, making them unsuitable for large-scale integration. Summary of the invention

[0003] The present invention provides an afferent neuron circuit and a mechanical sensing system, which solve the technical problems in the prior art that the afferent neuron circuit has a complex structure, poor miniaturization, and is not conducive to large-scale integrated use.

[0004] In order to solve the above technical problems, the present invention provides an afferent neuron circuit, comprising: a resistor Rc and a volatile threshold transition device TS;

[0005] The volatile threshold transition device TS has a parasitic capacitance C Parasitic ;

[0006] The first end of the resistor Rc is used as a signal input end, and the second end of the resistor Rc is used as a signal output end;

[0007] A first terminal of the volatile threshold transition device TS is connected to the signal output terminal, and a second terminal of the volatile threshold transition device TS is grounded.

[0008] Furthermore, the afferent neuron circuit adopts a semiconductor integrated structure.

[0009] Further, the volatile threshold transition device TS comprises:

[0010] A first substrate 11;

[0011] A first isolation layer 12, formed on the first substrate 11;

[0012] A first lower electrode 13, formed on the first isolation layer 12;

[0013] A second isolation layer 14, formed on the first lower electrode 13;

[0014] A first functional layer 15 is formed on the second isolation layer 14, and a middle portion of the first functional layer 15 is connected to the first lower electrode 13 via an etched through hole;

[0015] A first intermediate electrode 16, formed on the first functional layer 15;

[0016] A first resistance film 17 is deposited on the first intermediate electrode 16 to serve as the resistor Rc, and a first upper electrode 18 is deposited on the first resistance film 17 .

[0017] Further, the first substrate 11 is a silicon wafer;

[0018] The first isolation layer 12 is a SiO2 layer;

[0019] The material of the first lower electrode 13 is TiN, Poly-Si, Pd, Pt, W or Au;

[0020] The second isolation layer 14 is a SiO2 layer;

[0021] The material of the first functional layer 15 is NbO2, VO2, SiTe, SiO2:Ag, a-Si:Cu, a-Si:Ag or AM4Q8;

[0022] The material of the first intermediate electrode 16 is TiN, Poly-Si, Pd, Pt, W, Cu, Ag or Au;

[0023] The resistance value of the first resistance film 17 is greater than 5 times the resistance value of the first functional layer 15 in a low resistance state and less than 1 / 5 of the resistance value of the first functional layer 15 in a high resistance state;

[0024] Among them, the AM4Q8 is a mixed material of Ga, Ge, V, Nb, Ta, Mo, S and Se.

[0025] Further, the volatile threshold transition device TS comprises:

[0026] A second substrate 21;

[0027] A third isolation layer 22, formed on the second substrate 21;

[0028] A second lower electrode 23, formed on the third isolation layer 22;

[0029] A second functional layer 24, formed on the third isolation layer 23;

[0030] A second intermediate electrode 25 formed on the second functional layer 24;

[0031] A second resistance film 26 is deposited on the second intermediate electrode 25 to serve as the resistor Rc, and a second upper electrode 27 is deposited on the second resistance film 26 .

[0032] Further, the second substrate 21 is a silicon wafer;

[0033] The third isolation layer 22 is a SiO2 layer;

[0034] The material of the second lower electrode 23 is TiN, Poly-Si, Pd, Pt, W or Au;

[0035] The material of the second functional layer 24 is NbO2, VO2, SiTe, SiO2:Ag, a-Si:Cu, a-Si:Ag or AM4Q8;

[0036] The material of the second intermediate electrode 25 is TiN, Poly-Si, Pd, Pt, W, Cu, Ag or Au;

[0037] The resistance value of the second resistance film 26 is greater than 5 times the resistance value of the second functional layer 24 in the low resistance state and less than 1 / 5 of the resistance value of the first functional layer 15 in the high resistance state;

[0038] Among them, the AM4Q8 is a mixed material of Ga, Ge, V, Nb, Ta, Mo, S and Se.

[0039] A mechanoreceptive system, comprising: the afferent neuron circuit described above; and

[0040] A first piezoelectric film 19, formed on the first upper electrode 18;

[0041] The first ground electrode 10 is deposited on the first piezoelectric film 19 .

[0042] Furthermore, the material of the first piezoelectric film 19 can be BaTiO3 / bacterial cellulose, K 0.5 Na 0.5 NbO3-BaTiO3 / polyvinylidene fluoride, crystal, lithium gallate, lithium germanate, titanium germanate or lithium tantalate.

[0043] A mechanoreceptive system, comprising: the afferent neuron circuit described above; and

[0044] A second piezoelectric film 28, formed on the second upper electrode 27;

[0045] The second ground electrode 29 is deposited on the second piezoelectric film 28 .

[0046] Furthermore, the material of the second piezoelectric film 28 can be BaTiO3 / bacterial cellulose, K 0.5 Na 0.5 NbO3-BaTiO3 / polyvinylidene fluoride, crystal, lithium gallate, lithium germanate, titanium germanate or lithium tantalate.

[0047] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:

[0048] The afferent neuron circuit and mechanical perception system provided by the present invention provided in the embodiment of the present application form a simple afferent neuron circuit through a series resistor Rc and a volatile threshold transition device TS. The connection point where the volatile threshold transition device TS is connected to the resistor Rc serves as the output end of the signal. The input signal is a voltage signal or a current signal, and the output signal is an oscillating frequency signal. The oscillation frequency of the output signal is related to the intensity of the input signal. The volatile threshold transition device TS is provided with a parasitic capacitor CParasitic. When there is an input signal at the input end, the circuit charges the TS device through the resistor Rc. When the voltage across the parasitic capacitor CParasitic exceeds the transition voltage of the TS device, the TS device is transformed into a low-resistance state, and the capacitor is discharged through the TS device; when the voltage across the parasitic capacitor CParasitic is reduced to the holding voltage of the TS device, the TS device is transformed into a high-resistance state, and the parasitic capacitor CParasitic is charged again through the resistor Rc. This is repeated to form an oscillating output pulse signal, thereby realizing the so-called functional integrity of the afferent neuron. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figure 1 A schematic diagram of an afferent neuron circuit provided in Embodiment 1 of the present invention;

[0050] Figure 2 A schematic diagram of a mechanical sensing system provided in Embodiment 1 of the present invention;

[0051] Figure 3 A schematic diagram of a semiconductor integrated structure of an afferent neuron circuit provided in Embodiment 1 of the present invention;

[0052] Figure 4 A schematic diagram of the process flow of semiconductor integrated structure processing of an afferent neuron circuit provided in the first embodiment of the present invention;

[0053] Figure 5 A schematic diagram of the semiconductor integrated structure of the mechanoreceptor system provided in the first embodiment of the present invention;

[0054] Figure 6 A schematic diagram of a process flow of a semiconductor integrated structure of a mechanical sensing system provided in Embodiment 1 of the present invention;

[0055] Figure 7 A schematic diagram of a semiconductor integrated structure of an afferent neuron circuit provided in Embodiment 2 of the present invention;

[0056] Figure 8A schematic diagram of the process flow of semiconductor integrated structure processing of an afferent neuron circuit provided in the second embodiment of the present invention;

[0057] Fig. 9 A schematic diagram of a semiconductor integrated structure of a mechanical sensing system provided in Embodiment 2 of the present invention;

[0058] Fig.10 A schematic diagram of a semiconductor integrated structure processing flow of a mechanical sensing system provided in the second embodiment of the present invention;

[0059] Fig.11 The IV characteristic curve of the afferent neuron circuit provided in Embodiment 1 and Embodiment 2 of the present invention;

[0060] Fig.12 Output oscillation curves of the afferent neuron circuits provided in Embodiment 1 and Embodiment 2 of the present invention under two input voltages;

[0061] Fig.13 The relationship between the output frequency and the input voltage of the afferent neuron circuit provided in the first and second embodiments of the present invention;

[0062] Fig.14 The output voltage curve of the piezoelectric film, the oscillation output curve of the afferent neuron circuit and the oscillation output frequency curve provided in the first and second embodiments of the present invention when pressure is applied. DETAILED DESCRIPTION

[0063] The embodiments of the present application provide an afferent neuron circuit and a mechanical sensing system to solve the technical problems in the prior art that the afferent neuron circuit has a complex structure, poor miniaturization, and is not conducive to large-scale integrated use.

[0064] In order to better understand the above-mentioned technical scheme, the above-mentioned technical scheme will be described in detail below in conjunction with the accompanying drawings and specific implementation methods. It should be understood that the embodiments of the present invention and the specific features in the embodiments are detailed descriptions of the technical scheme of the present application, rather than limitations on the technical scheme of the present application. In the absence of conflict, the embodiments of the present application and the technical features in the embodiments can be combined with each other.

[0065] See also Figure 1 , an afferent neuron circuit, comprising: a resistor Rc and a volatile threshold transition device TS; the volatile threshold transition device TS has a parasitic capacitor C Parasitic ; The first end of the resistor Rc serves as a signal input end, and the second end of the resistor Rc serves as a signal output end; the first end of the volatile threshold transition device TS is connected to the signal output end, and the second end of the volatile threshold transition device TS is grounded.

[0066] The input signal is a voltage signal or a current signal, the output signal is an oscillating frequency signal, and the oscillation frequency of the output signal is related to the strength of the input signal.

[0067] When there is an input signal at the input end, the circuit connects the parasitic capacitor C through the resistor Rc. Parasitic to charge.

[0068] When the parasitic capacitance C Parasitic When the voltage at both ends exceeds the transition voltage of the volatile threshold transition device TS, the volatile threshold transition device TS is transformed into a low resistance state, and the parasitic capacitor C Parasitic Discharging is performed through the volatile threshold transition device TS.

[0069] When the parasitic capacitance C Parasitic When the voltage across the two ends decreases to the holding voltage of the volatile threshold transition device TS, the volatile threshold transition device TS changes to a high impedance state, and the parasitic capacitor C Parasitic The resistor Rc is used to charge the battery again, and the process is repeated to form an oscillating output pulse signal.

[0070] See also Figure 2 On the basis of the afferent neuron circuit, piezoelectric components are added to form a mechanoreceptor system. Among them, the piezoelectric device is used to convert the mechanical stimulation felt into a related voltage signal; in the resting state, the piezoelectric device has no output, that is, the static power consumption is zero. During operation, the mechanoreceptor system converts the voltage signal generated by the piezoelectric device into a related oscillation frequency signal output. The oscillation frequency of the output signal is related to the mechanical strength felt by the piezoelectric device.

[0071] See also Figure 3 In this embodiment, in order to further improve the miniaturization of the structure and facilitate the integrated use of the afferent neuron circuit, the afferent neuron circuit adopts a semiconductor integrated structure.

[0072] Specifically, the volatile threshold transition device TS includes:

[0073] A first substrate 11;

[0074] A first isolation layer 12, formed on the first substrate 11;

[0075] A first lower electrode 13, formed on the first isolation layer 12;

[0076] A second isolation layer 14, formed on the first lower electrode 13;

[0077] A first functional layer 15 is formed on the second isolation layer 14, and a middle portion of the first functional layer 15 is connected to the first lower electrode 13 via an etched through hole;

[0078] A first intermediate electrode 16, formed on the first functional layer 15;

[0079] A first resistance film 17 is deposited on the first intermediate electrode 16 to serve as the resistor Rc, and a first upper electrode 18 is deposited on the first resistance film 17 .

[0080] In this embodiment, the first substrate 11 is a silicon wafer;

[0081] The first isolation layer 12 is a SiO2 layer;

[0082] The material of the first lower electrode 13 is TiN, Poly-Si, Pd, Pt, W or Au, and may also be other inert conductive materials;

[0083] The second isolation layer 14 is a SiO2 layer;

[0084] The material of the first functional layer 15 is NbO2, VO2, SiTe, SiO2:Ag, a-Si:Cu, a-Si:Ag or AM4Q8; the functional layer material includes but is not limited to the above materials, and any material with volatile threshold transition characteristics can be used.

[0085] The material of the first intermediate electrode 16 is TiN, Poly-Si, Pd, Pt, W, Cu, Ag or Au;

[0086] The resistance value of the first resistance film 17 is greater than 5 times the resistance value of the first functional layer 15 in a low resistance state and less than 1 / 5 of the resistance value of the first functional layer 15 in a high resistance state;

[0087] Among them, the AM4Q8 is a mixed material of Ga, Ge, V, Nb, Ta, Mo, S and Se.

[0088] See also Figure 4 , the preparation process of the afferent neuron circuit and the mechanoreceptor system will be described in detail below.

[0089] Step 1: Using a silicon wafer as the first substrate 11, oxidizing the silicon wafer to form a SiO2 layer as the first isolation layer 12; the thickness of the SiO2 layer is 100nm to 300nm, and the thickness of the oxide layer can be reduced or increased according to actual process conditions.

[0090] Step 2: depositing a first lower electrode 13 on the SiO2 layer, wherein the thickness of the first lower electrode 13 is 10 nm to 100 nm.

[0091] Step 3: depositing a second isolation layer 14 on the first lower electrode 13. The second isolation layer 14 is a SiO2 layer with a thickness of 100nm to 300nm. The thickness of the oxide layer can be reduced or increased according to actual process conditions.

[0092] Step 4: Use an etching process to etch holes on the deposited film prepared in steps 1 to 3, the depth of the holes directly reaching the first isolation layer 12, and etch a certain depth on the first isolation layer 12 to ensure that the cross section of the first lower electrode 13 is completely exposed. The first isolation layer 12 must also retain a sufficient thickness after etching.

[0093] Step 5: depositing a first functional layer 15 on the etched holes, wherein the thickness of the first functional layer 15 is 5 nm to 50 nm.

[0094] Step 6: depositing a first intermediate electrode 16 on the first functional layer 15 , wherein the thickness of the first intermediate electrode 16 is 10 nm to 100 nm.

[0095] Step 7: A first resistance film 17 is deposited on the first intermediate electrode 16 as a resistor Rc, and the resistance value of the first resistance film 17 is 1Ω to 1MΩ. The resistance value is determined by the high and low resistance states of the actually deposited functional layer.

[0096] Step 8: Deposit a first upper electrode 18 on the first resistance film. The material of the first upper electrode 18 is not limited.

[0097] See also Figure 5 This embodiment also provides a mechanical perception system, including: the afferent neuron circuit; and

[0098] A first piezoelectric film 19, formed on the first upper electrode 18;

[0099] The first ground electrode 10 is deposited on the first piezoelectric film 19 .

[0100] The material of the first piezoelectric film 19 can be BaTiO3 / bacterial cellulose, K0.5Na0.5NbO3-BaTiO3 / polyvinylidene fluoride, crystal, lithium gallate, lithium germanate, titanium germanate or lithium tantalate. Piezoelectric materials include but are not limited to the above materials, and all materials with piezoelectric properties can be used. However, the thermal budget of the functional layer needs to be considered during the integration process to determine the annealing temperature of the piezoelectric material.

[0101] See also Figure 6 In this embodiment, based on the above method, a mechanical receptor system is prepared:

[0102] Step 9: Based on the above afferent neuron circuit, a first piezoelectric film 19 is deposited on the first upper electrode 18 .

[0103] Step 10: Deposit the first ground electrode 10 on the first piezoelectric film 19; the material of the first ground electrode 10 is not limited.

[0104] Embodiment 2

[0105] See also Figure 7 Based on the first embodiment, another solution of a volatile threshold transition device TS is provided.

[0106] The volatile threshold transition device TS comprises:

[0107] A second substrate 21;

[0108] A third isolation layer 22, formed on the second substrate 21;

[0109] A second lower electrode 23, formed on the third isolation layer 22;

[0110] A second functional layer 24, formed on the third isolation layer 23;

[0111] A second intermediate electrode 25 formed on the second functional layer 24;

[0112] A second resistance film 26 is deposited on the second intermediate electrode 25 to serve as the resistor Rc, and a second upper electrode 27 is deposited on the second resistance film 26 .

[0113] In this embodiment, the second substrate 21 is a silicon wafer;

[0114] The third isolation layer 22 is a SiO2 layer;

[0115] The material of the second lower electrode 23 is an inert conductive material such as TiN, Poly-Si, Pd, Pt, W or Au;

[0116] The material of the second functional layer 24 is NbO2, VO2, SiTe, SiO2:Ag, a-Si:Cu, a-Si:Ag or AM4Q8; the functional layer material includes but is not limited to the above materials, and any material with volatile threshold transition characteristics can be used.

[0117] The second intermediate electrode 25 is made of a conductive material such as TiN, Poly-Si, Pd, Pt, W, Cu, Ag or Au.

[0118] The resistance value of the second resistance film 26 is greater than 5 times the resistance value of the second functional layer 24 in the low resistance state and less than 1 / 5 of the resistance value of the first functional layer 15 in the high resistance state;

[0119] Among them, the AM4Q8 is a mixed material of Ga, Ge, V, Nb, Ta, Mo, S and Se.

[0120] See also Figure 8 This embodiment also provides a preparation scheme for a volatile threshold transition device TS.

[0121] Step 1: Use a silicon wafer as the second substrate 21, and oxidize the silicon wafer to form a SiO2 layer as the second isolation layer 22. The thickness of the SiO2 layer is 100nm to 300nm. The thickness of the oxide layer can be reduced or increased according to actual process conditions.

[0122] Step 2: depositing a second lower electrode 23 on the second isolation layer 22, wherein the thickness of the second lower electrode 23 is 10 nm to 100 nm.

[0123] Step 3: depositing a second functional layer 24 on the second lower electrode 23, wherein the thickness of the second functional layer 24 is 5 nm to 50 nm.

[0124] Step 4: depositing a second intermediate electrode 25 on the second functional layer 24 , wherein the thickness of the second intermediate electrode 25 is 10 nm to 100 nm.

[0125] Step 5: deposit a second resistance film 26 on the second intermediate electrode 25, the resistance value of the second resistance film 26 is 1Ω to 1MΩ, and the resistance value is determined by the high and low resistance states of the actually deposited functional layer.

[0126] Step 6: Deposit the second upper electrode 27 on the second resistance film 26. The material of the second upper electrode 27 is not limited.

[0127] See also Fig. 9 This embodiment also provides a mechanical sensing system, including: the afferent neuron circuit described above; and a second piezoelectric film 28 formed on the second upper electrode 27 ; and a second ground electrode 29 deposited on the second piezoelectric film 28 .

[0128] The material of the second piezoelectric film 28 can be BaTiO3 / bacterial cellulose, K 0.5 Na 0.5 NbO3-BaTiO3 / polyvinylidene fluoride, crystal, lithium gallate, lithium germanate, titanium germanate or lithium tantalate.

[0129] See also Fig.10 , this embodiment provides a preparation method.

[0130] Step 7: Based on the above afferent neuron integration scheme, a second piezoelectric film 28 is deposited on the second upper electrode 27. Piezoelectric materials include but are not limited to the above materials, and any material with piezoelectric properties can be used. However, the thermal budget of the functional layer needs to be considered during the integration process to determine the annealing temperature of the piezoelectric material.

[0131] Step 8: Deposit the second ground electrode 29 on the second piezoelectric film 28. The material of the second ground electrode 29 is not limited.

[0132] The performance of the above circuits and systems are illustrated below by means of curve charts.

[0133] See also Fig.11 , obtaining IV characteristic curves under voltage scanning using the volatile threshold transition devices TS prepared in Example 1 and Example 2 respectively;

[0134] When the voltage applied to the middle electrode exceeds a certain voltage value (V TH+ or V TH- ), the volatile threshold transition device TS changes from a high resistance state to a low resistance state.

[0135] During the voltage retrace process, when the voltage is less than a certain voltage value (V HOLD+ or V HOLD- ) Since the voltage on the middle electrode is not sufficient to maintain its low resistance state, the volatile threshold transition device TS recovers from the low resistance state to the high resistance state.

[0136] See also Fig.12 , the output oscillation curve of the afferent neuron circuit under two input voltages. The output oscillation curve of the afferent neuron circuit under two input voltages. When the input is a constant voltage value, the afferent neuron outputs a stable oscillation signal, and the output frequency of the oscillation signal is related to the magnitude of the input voltage. This corresponds to the working mode of the afferent neurons in the organism. The results show that the designed afferent neurons can convert the simulated input signal into different output oscillation frequencies, which can meet the needs of the pulse neural network.

[0137] See also Fig.13 , the relationship between the output frequency and input voltage of the afferent neuron circuit provided in Example 1 and Example 2; within a certain voltage range, the output frequency of the afferent neuron increases linearly with the input voltage. This shows that the output frequency of the afferent neuron can correctly reflect the intensity of the stimulus input.

[0138] See also Fig.14, Example 1 and Example 2 provide the output voltage curve of the piezoelectric film, the oscillation output curve of the afferent neuron circuit, and the oscillation output frequency curve when pressure is applied. The output frequency of the afferent neuron under a large-amplitude sine wave input presents two frequency peaks. Within a small input voltage range, the output frequency increases with the increase of the input voltage. When the input voltage reaches a certain value, the output frequency reaches the maximum saturation value. Continue to increase the voltage, and the output oscillation frequency gradually decreases until the oscillation stops. This shows that the afferent neuron circuit has a self-protection mechanism. When the intensity of the external stimulation signal is too large, the afferent neuron can self-adjust the output frequency to adapt to the external environment, thereby maintaining the stability of the subsequent system.

[0139] It is not difficult to find that the circuits and systems prepared by the above embodiments have good afferent neuron circuit performance.

[0140] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:

[0141] The afferent neuron circuit and mechanical perception system provided by the present invention provided in the embodiment of the present application form a simple afferent neuron circuit through a series resistor Rc and a volatile threshold transition device TS. The connection point where the volatile threshold transition device TS is connected to the resistor Rc serves as the output end of the signal. The input signal is a voltage signal or a current signal, and the output signal is an oscillating frequency signal; the oscillation frequency of the output signal is related to the intensity of the input signal. The volatile threshold transition device TS is provided with a parasitic capacitor CParasitic. When there is an input signal at the input end, the circuit charges the TS device through the resistor Rc. When the voltage across the parasitic capacitor CParasitic exceeds the transition voltage of the TS device, the TS device is transformed into a low-resistance state, and the capacitor is discharged through the TS device; when the voltage across the parasitic capacitor CParasitic is reduced to the holding voltage of the TS device, the TS device is transformed into a high-resistance state, and the parasitic capacitor CParasitic is charged again through the resistor Rc. This is repeated to form an oscillating output pulse signal, thereby achieving functional integrity.

[0142] Finally, it should be noted that the above specific implementation methods are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to examples, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.

Claims

1. An afferent neuron circuit, characterized in that include: A resistor Rc and a volatile threshold transition device TS; The volatile threshold transition device TS has a parasitic capacitance C Parasitic ; The first end of the resistor Rc is used as a signal input end, and the second end of the resistor Rc is used as a signal output end; The first end of the volatile threshold transition device TS is connected to the signal output end, and the second end of the volatile threshold transition device TS is grounded; Wherein: the afferent neuron circuit adopts a semiconductor integrated structure; The volatile threshold transition device TS comprises: A first substrate (11); A first isolation layer (12) formed on the first substrate (11); A first lower electrode (13) formed on the first isolation layer (12); A second isolation layer (14) formed on the first lower electrode (13); A first functional layer (15) is formed on the second isolation layer (14), and a middle portion of the first functional layer (15) is connected to the first lower electrode (13) via an etched through hole; A first intermediate electrode (16) formed on the first functional layer (15); A first resistance film (17) is deposited on the first intermediate electrode (16) as the resistor Rc, and a first upper electrode (18) is deposited on the first resistance film (17); When there is an input signal at the signal input terminal, the parasitic capacitor C Parasitic Charging; When the parasitic capacitance C Parasitic When the voltage at both ends exceeds the transition voltage of the volatile threshold transition device TS, the volatile threshold transition device TS is transformed into a low resistance state, and the parasitic capacitor C Parasitic Discharging through the volatile threshold transition device TS; When the parasitic capacitance C Parasitic When the voltage across the two ends decreases to the holding voltage of the volatile threshold transition device TS, the volatile threshold transition device TS changes to a high impedance state, and the parasitic capacitor C Parasitic The battery is charged again through the resistor Rc.

2. The afferent neuron circuit of claim 1, wherein: The first substrate (11) is a silicon wafer; The first isolation layer (12) is a SiO2 layer; The material of the first lower electrode (13) is TiN, Poly-Si, Pd, Pt, W or Au; The second isolation layer (14) is a SiO2 layer; The material of the first functional layer (15) is NbO2, VO2, SiTe, SiO2:Ag, a-Si:Cu, a-Si:Ag or AM4Q8; The material of the first intermediate electrode (16) is TiN, Poly-Si, Pd, Pt, W, Cu, Ag or Au; The resistance value of the first resistance film (17) is greater than 5 times the resistance value of the first functional layer (15) in a low resistance state and less than 1 / 5 of the resistance value of the first functional layer (15) in a high resistance state; Among them, the AM4Q8 is a mixed material of Ga, Ge, V, Nb, Ta, Mo, S and Se.

3. The afferent neuron circuit of claim 2, wherein: The volatile threshold transition device TS comprises: A second substrate (21); A third isolation layer (22) formed on the second substrate (21); A second lower electrode (23) formed on the third isolation layer (22); A second functional layer (24) formed on the third isolation layer (22); A second intermediate electrode (25) formed on the second functional layer (24); A second resistance film (26) is deposited on the second intermediate electrode (25) as the resistor Rc, and a second upper electrode (27) is deposited on the second resistance film (26).

4. The afferent neuron circuit of claim 3, wherein: The second substrate (21) is a silicon wafer; The third isolation layer (22) is a SiO2 layer; The material of the second lower electrode (23) is TiN, Poly-Si, Pd, Pt, W or Au; The material of the second functional layer (24) is NbO2, VO2, SiTe, SiO2:Ag, a-Si:Cu, a-Si:Ag or AM4Q8; The material of the second intermediate electrode (25) is TiN, Poly-Si, Pd, Pt, W, Cu, Ag or Au; The resistance value of the second resistance film (26) is greater than 5 times the resistance value of the second functional layer (24) in a low resistance state and less than 1 / 5 of the resistance value of the first functional layer (15) in a high resistance state; Among them, the AM4Q8 is a mixed material of Ga, Ge, V, Nb, Ta, Mo, S and Se.

5. A mechanical sensory system, characterized in that: include: The afferent neuron circuit of claim 1; as well as, A first piezoelectric film (19) formed on the first upper electrode (18); A first grounding electrode (10) is deposited on the first piezoelectric film (19).

6. The mechanoreceptor system according to claim 5, wherein: The material of the first piezoelectric film (19) is BaTiO3 / bacterial cellulose, K 0.5 Na 0.5 NbO3-BaTiO3 / polyvinylidene fluoride, crystal, lithium gallate, lithium germanate, titanium germanate or lithium tantalate.

7. A mechanical sensory system, characterized in that: include: The afferent neuron circuit of claim 3; as well as, A second piezoelectric film (28) formed on the second upper electrode (27); A second grounding electrode (29) is deposited on the second piezoelectric film (28).

8. The mechanoreceptor system according to claim 7, wherein: The material of the second piezoelectric film (28) is BaTiO3 / bacterial cellulose, K 0.5 Na 0.5 NbO3-BaTiO3 / polyvinylidene fluoride, crystal, lithium gallate, lithium germanate, titanium germanate or lithium tantalate.

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