Light receiving element, method for manufacturing light receiving element, and imaging device

By forming a diffusion region with gradually changing impurity concentration on the surface of the semiconductor light receiving element, ease the lateral electric field, the problem of increasing dark current in the prior art is solved, and a higher sensitivity and signal-to-noise ratio are achieved.

CN113366656BActive Publication Date: 2025-03-25SONY SEMICON SOLUTIONS CORP
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Patent Information

Application Number
CN202080012286.9
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-03-20
Filing Date
2020-02-21
Publication Date
2025-03-25
Estimated Expiration
2040-02-21

AI Technical Summary

Technical Problem

The uniform zinc concentration distribution of existing semiconductor light receiving elements in the depth and lateral directions leads to an increase in dark current, affecting the sensitivity and signal-to-noise ratio of the device.

Method used

The first and second impurity diffusion regions with gradually changing impurity concentration are formed on the surface of the semiconductor layer, the transverse electric field is alleviated, and the second impurity diffusion region is formed by annealing to reduce the impurity concentration.

Benefits of technology

It effectively reduces dark current, improves the sensitivity and signal-to-noise ratio of the light receiving element, and reduces the generation of noise.

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Abstract

According to one embodiment of the present disclosure, a light receiving element (1) includes: a semiconductor layer, which includes a composite semiconductor material; a first impurity diffusion region (12A) which is arranged on a surface of the semiconductor layer; and a second impurity diffusion region (12B) which is arranged around the first impurity diffusion region (12A) and has a lower impurity concentration than the first impurity diffusion region (12A).
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