Semiconductor device and method for forming the same
By forming multi-layer structures and conductive vias on the substrate of semiconductor devices, the manufacturing complexity problem caused by size reduction is solved, and higher wiring flexibility and unit density are achieved, and device performance is improved.
CN113517274BActive Publication Date: 2025-03-25TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD +2
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Patent Information
- Application Number
- CN202010723363.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-07-24
- Publication Date
- 2025-03-25
- Estimated Expiration
- 2040-12-28
AI Technical Summary
Technical Problem
As the size of semiconductor devices decreases, the manufacturing process becomes more complex and it is difficult to form reliable semiconductor devices.
Method used
Vertical overlap of the metal wire and the conductive vias is achieved by forming an active region, an isolation structure, a metal wire, a gate structure, a source/drain region and a source/drain contact on the substrate, and forming a multi-layer dielectric layer and a conductive via on these structures.
Benefits of technology
Improves wiring flexibility and unit density, reduces spacers, and enhances device performance.
✦ Generated by Eureka AI based on patent content.
Abstract
The present application discloses a semiconductor device and a method for forming the same. A semiconductor device includes a substrate, an active region, an isolation structure, a first metal line, a gate structure, a source / drain region, a source / drain contact, and a second metal line. The active region protrudes from the top surface of the substrate. The isolation structure is above the substrate and laterally surrounds the active region. The first metal line is in the isolation structure. The gate structure is above the active region. The source / drain region is in the active region. The source / drain contact is above the active region and electrically connected to the source / drain region. The second metal line is above the gate structure and the source / drain contact, wherein the second metal line vertically overlaps the first metal line.
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