Hybrid system architecture for thin film deposition
By designing a system that integrates a vacuum shell, processing chamber, delivery chamber, loading lock and rail exchanger, water vapor, particle contamination and wafer damage problems when forming a thin film coating on semiconductor wafers are solved, and efficient and safe film formation is achieved.
Patent Information
- Application Number
- CN201980084403.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2019-09-25
- Filing Date
- 2019-12-18
- Publication Date
- 2025-03-28
- Estimated Expiration
- 2039-12-18
AI Technical Summary
In the prior art, when forming a thin film coating, especially in the process of sputtering a magnetic material film on a semiconductor wafer, there are problems such as water vapor reaching each layer, particle contamination, and wafer shedding and damage, making it difficult to achieve high yield and commercially acceptable costs.
A system is designed that includes a vacuum housing, multiple processing chambers, conveying chambers, loading locks, gate valves, rail exchangers and articulated robotic arms. Through the coordinated work of these components, efficient processing and loading of semiconductor wafers in a vacuum environment is achieved, avoiding water vapor and particle contamination, and ensuring wafer safety.
The system can effectively avoid water vapor and particle contamination, reduce the risk of wafer shedding and breakage, achieve high yield and commercially acceptable costs, and is suitable for the formation of multi-layer films on semiconductor wafers.