Semiconductor devices

By reducing the end thickness of the dielectric film in the semiconductor device and reducing the step difference of the protective layer, the problem of cracks in the protective layer caused by thermal deformation is solved, thereby improving the voltage resistance of the dielectric film and preventing the reduction of the insulation damage strength.

CN114008767BActive Publication Date: 2025-03-28MURATA MFG CO LTD
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Patent Information

Application Number
CN202080045558.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-08-21
Filing Date
2020-08-17
Publication Date
2025-03-28
Estimated Expiration
2040-08-17

AI Technical Summary

Technical Problem

In semiconductor devices, internal stresses occur in the protective layer due to thermal deformation, which easily leads to a decrease in the insulation failure strength of the dielectric film, especially at high voltages.

Method used

By making the thickness at the outer peripheral end of the end protective layer covering part of the dielectric film smaller than the thickness of the dielectric film outside the end, the thickness of the end portion of the dielectric film is reduced, thereby reducing the step difference of the protective layer and reducing internal stress, thereby suppressing the generation of cracks in the protective layer.

Benefits of technology

Effectively prevent moisture from entering the dielectric film through cracks, improve the voltage resistance of the dielectric film, and prevent the reduction of the insulation damage strength, that is, improve the voltage resistance of the dielectric film.

✦ Generated by Eureka AI based on patent content.
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Abstract

The present invention provides a semiconductor device that can suppress the generation of cracks in a protective layer around the end of a dielectric film and suppress the reduction in the dielectric breakdown strength of the dielectric film caused by the generation of cracks. The semiconductor device comprises: a semiconductor substrate having a first main surface and a second main surface facing each other; a dielectric film arranged on a portion of the first main surface; a first electrode layer arranged on a portion of the dielectric film; and a protective layer continuously covering from the end of the first electrode layer to the outer peripheral end of the above-mentioned dielectric film. The dielectric film comprises: an electrode layer arrangement portion, in which the first electrode layer is arranged; and a protective layer covering portion, which is covered by the protective layer. The thickness of the protective layer covering portion of the dielectric film at the outer peripheral end is smaller than the thickness of the electrode layer arrangement portion of the dielectric film.
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